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Volumn 107, Issue 2, 2010, Pages

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

(13) El Fatimy, A a,b Dyakonova, N c Meziani, Y d Otsuji, T a Knap, W c Vandenbrouk, S e Madjour, K e Theron D e Gaquiere, C e Poisson, M A f Delage, S f Prystawko, P g Skierbiszewski, C g

a TOHOKU UNIVERSITY (Japan)

b CARDIFF UNIVERSITY (United Kingdom)

c UNIVERSITÉ MONTPELLIER 2 (France)

d UNIVERSITY OF SALAMANCA (Spain)

e INSTITUT D ELECTRONIQUE (France)

f THALES RESEARCH AND TECHNOLOGY (France)

g INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DRAIN BIAS; EMISSION PEAKS; GATE VOLTAGES; PLASMA MODE; RADIATION FREQUENCIES; ROOM TEMPERATURE; SUBMICRON SIZE; TERAHERTZ GENERATION; TERAHERTZ SOURCES; TRANSISTOR CHANNELS; VOLTAGE-TUNABLE;

ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; LEAKAGE (FLUID); MAGNETIC FIELD EFFECTS; PLASMA DIAGNOSTICS; PLASMA STABILITY; PLASMA WAVES; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 75749139368 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3291101 Document Type: Article

Times cited : (157)

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