Field effect transistors for terahertz applications

Handbook of Terahertz Technology for Imaging, Sensing and Communications

Volumn , Issue , 2013, Pages 91-120

  Knap, W ^a   Dyakonov, M I ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

Field effect transistors; Low dimensional systems; Plasma waves; Semiconductors; Terahertz radiation

Indexed keywords

NATURAL FREQUENCIES; PLASMA OSCILLATIONS; PLASMA WAVES; SEMICONDUCTOR MATERIALS; TERAHERTZ WAVES; TRANSISTORS;

CHANNEL DIMENSION; FIELD EFFECT TRANSISTOR (FETS); LOW-DIMENSIONAL SYSTEMS; SPONTANEOUS GENERATION; TERAHERTZ APPLICATIONS; TERAHERTZ RADIATION; THZ FREQUENCIES; TWO-DIMENSIONAL PLASMA;

FIELD EFFECT TRANSISTORS;

EID: 84942798101     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1533/9780857096494.1.121     Document Type: Chapter

References (48)

1. Dyakonov M.I., Shur M.S. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current. Phys. Rev. Lett. 1993, 71:2465.
2. Dyakonov M.I., Shur M.S. Plasma wave electronics: novel terahertz devices using two dimensional electron fluid. IEEE Trans. Electron Devices 1996, 43:380.
3. Knap W., Łusakowski J., Parenty T., Bollaert S., Cappy A., Popov V.V., Shur M.S. Terahertz emission by plasma waves in 60nm gate high electron mobility transistors. Appl. Phys. Lett. 2004, 84:3523.
4. Dyakonova N., Teppe F., Łusakowski J., Knap W., Levinshtein M., Dmitriev A.P., Shur M.S., Bollaert S., Cappy A. Magnetic field effect on the terahertz emission from nanometer InGaAs/AllnAs high electron mobility transistors. J. Appl. Phys. 2005, 97:4313.
5. Dyakonova N., El Fatimy A., Łusakowski J., Knap W., Dyakonov M.I., Poisson M.A., Morvan E., Bollaert S., Shchepetov A., Roelens Y., Gaquiere Ch., Theron D., Cappy A. Room temperature terahertz emission from nanometer field-effect transistors. Appl. Phys. Lett. 2006, 88:141906.
6. El Fatimy A., Dyakonova N., Meziani Y., Otsuji T., Knap W., Vandenbrouk S., Madjour K., Théron D., Gaquiere C., Poisson M.A., Delage S., Pristawko P., Skierbiszewski C. AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources. J. Appl. Phys. 2010, 107:024504.
7. Lu J.-Q., Shur M.S., Hesler J.L., Sun L., Weikle R. Terahertz detector utilizing two-dimensional electronic fluid. IEEE Electron Device Lett. 1998, 19:373.
8. Lu J.-Q., Shur M.S. Terahertz detection by high-electron-mobility transistor: enhancement by drain bias. Appl. Phys. Lett. 2001, 78:2587.
9. Knap W., Deng Y., Rumyantsev S., Shur M.S. Resonant detection of sub- terahertz and terahertz radiation by plasma waves in submicron field-effect transistors. Appl. Phys. Lett. 2002, 81:4637.
10. Appl.Phys. Lett. 2002, 80:3434.
11. El Fatimy A., Teppe F., Dyakonova N., Knap W., Seliuta D., Valušis G., Shchepetov A., Roelens Y., Bollaert S., Cappy A., Rumyantsev S. Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors. Appl. Phys. Lett. 2006, 89:131926.
12. Knap W., Dyakonov M., Coquillat D., Teppe F., Dyakonova N., Łusakowski J., Karpierz K., Valusis G., Seliuta D., Kasalynas I., El Fatimy A., Otsuji T. Field effect transistors for terahertz detection: physics and first imaging applications. J. Infrared Milli Terahz Waves 2009, 30:1319.
13. Stern F. Polarizability of a two-dimensional electron gas. Phys. Rev. Lett. 1967, 18:546.
14. Chaplik A.V. Energy spectrum and electron scattering processes in inversion layers. Zh. Eksp. Teor. Fiz. 1971, 60:1845.
15. Sov. Phys. JETP 1971, 33:997.
16. Nakayama M. Theory of surface waves coupled to surface carriers. J. Phys. Soc. Jpn. 1974, 36:393.
17. Eduiluz A., Lee T.K., Quinn J.J., Chiu K.W. Phys. Rev. B 1975, 11:4989.
18. Allen S.J., Tsui D.C., Logan R.A. Observation of the two-dimensional plasmon in silicon inversion layers. Phys. Rev. Lett. 1977, 38:980.
19. Tsui D.C., Gornik E., Logan R.A. Far infrared emission from plasma oscillations of Si inversion layers. Solid State Commun. 1980, 35:875.
20. Dmitriev A.P., Furman A.S., Kachorovskii V.Yu., Samsonidze G.G., Samsonidze Ge.G. Numerical study of the current instability in a two-dimensional electron fluid. Phys. Rev. B 1997, 55:10319.
21. Dyakonov M., Shur M.S. Current instability and plasma waves generation in ungated two-dimensional electron layers. Appl. Phys. Lett. 2005, 87:111501.
22. Dyakonov M.I. Boundary instability of a two-dimensional plasma. Semiconductors 2008, 42:984.
23. Veksler D., Teppe F., Dmitriev A.P., Kachorovskii V.Yu., Knap W., Shur M.S. Detection of terahertz radiation in gated two-dimensional structures governed by dc current. Phys. Rev. B 2006, 73:125328. Published March 21, 2006.
24. Elkhatib T.A., Kachorovskii V.Yu., Stillman W.J., Rumyantsev S., Zhang X.-C., Shur M.S. Terahertz response of field-effect transistors in saturation regime. Appl. Phys. Lett. 2011, 98:243505.
25. Lisauskas A., Pfeiffer U., Öjefors E., Bolivar P.H., Glaab D., Roskos H.G. Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors. J. Appl. Phys. 2009, 105:114511.
26. Boubanga-Tombet S., Sakowicz M., Coquillat D., Teppe F., Knap W., Dyakonov M.I., Karpierz K., Łusakowski J., Grynberg M. Terahertz radiation detection by field effect transistor in magnetic field. Appl. Phys. Lett. 2009, 95:072106.
27. Lifshits M.B., Dyakonov M.I. Phys. Rev. B 2009, 80:121304. R.
28. Dyakonov M.I., Furman A.S. Charge relaxation in an anisotropic medium and in low-dimensional media. Zh. Eksp. Teor. Fiz. 1987, 92:1012.
29. Sov. Phys. JETP 1987, 65:574.
30. Knap W., Kachorovskii V., Deng Y., Rumyantsev S., Lü J.-Q., Gaska R., Shur M.S., Simin G., Hu X., Asif Khan M., Saylor C.A., Brunel L.C. J. Appl. Phys 2002, 91:9346.
31. Lifshits M.B. Terahertz photoresponse of field effect transistors near the threshold. 31st International Conference on the Physics of Semiconductors 2012, 242. Zurich, Book of Abstracts.
32. Sakowicz M., Lifshits M.B., Klimenko O.A., Schuster F., Coquillat D., Teppe F., Knap W. Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects. J. Appl. Phys. 2011, 110:054512.
33. Knap W., Dur D., Raymond A., Meny C., Leotin J., Huant S., Etienne B. A far infrared spectrometer based on cyclotron-resonance emission sources. Rev. Sci. Instrum. 1992, 63(6):3293-3297.
34. Chaubet W., Raymond C.A., Knap W., Muiot J.Y., Baj M., Andre J.P. Pressure dependence of cyclotron mass in GaAs/GaAlAs heterojunctions by far infrared emission and transport experiments. Semicond. Sci. Tech. 1991, 6(3):160-164.
35. Ryzhii V., Satou A., Knap W., Shur M.S. Plasma oscillations in high-electron-mobility transistors with recessed gate. J. Appl. Phys. 2006, 99:084507.
36. Sakowicz M., Lusakowski J., Karpierz K., Grynberg M., Knap W., Gwarek W. Polarization sensitive detection of 100GHz radiation by high mobility field-effect transistors. J. Appl. Phys. 2008, 104:024519.
37. Videlier H., Nadar S., Sakowicz M., Trinhvandam T., Coquillat D., Teppe F., Dyakonova N., Knap W., Skotnicki T. Terahertz broadband detection using silicon MOSFET. J. Phys.: Conf. Ser. 2009, 193:012095. 24-28 August 2009, Montpellier, France.
38. Tauk R., Łusakowski J., Knap W., Tiberj A., B ougrioua Z., Azize M., Lorenzini P., Sakowicz M., Karpierz K., Fenouillet-Beranger C., Cassé M., Gallon C., Boeuf F., Skotnicki T. Low electron mobility of field-effect transistor determined by modulated magnetoresistance. J. Appl. Phys. 2007, 102:103701.
39. Knap W., Teppe F., Meziani Y., Dyakonova N., Lusakowski N., Boeuf F., Skotnicki T., Maude D., Rumyantsev S., Shur M.S. Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors. Appl. Phys. Lett. 2004, 85(4):675.
40. Tauk R., Teppe F., Boubanga S., Coquillat D., Knap W., Meziani Y.M., Gallon C., Boeuf F., Skotnicki T., Fenouillet-Beranger C., Maude D.K., Rumyantsev S., Shur M.S. Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power. Appl. Phys. Lett. 2006, 89:253511.
41. Schuster F., Coquillat D., Videlier H., Sakowicz M., Teppe F., Dussopt L., Giffard B., Skotnicki T., Knap W. Broadband terahertz imaging with highly sensitive silicon CMOS detectors. Opt. Express 2011, 19:7828.
42. Schuster F., Knap W., Nguyen V. Terahertz imaging achieved with low-cost CMOS detectors. Laser Focus World 2011, 47(7):37-41.
43. Ojefors E., Pfeiffer U., Lisauskas A., Roskos H. A 0.65 THz focal-plane array in a quarter-micron CMOS process technology. IEEE J. Solid-St. Circ. 2009, 44:1968-1976.
44. Nadar S., Videlier H., Coquillat D., Teppe F., Sakowicz M., Dyakonova N., Knap W., Seliuta D., Kašalynas I., Valušis G. Room temperature imaging at 1.63 and 2.54 terahertz with field effect transistor detectors. J. Appl. Phys. 2010, 108:054508.
45. Popov V.V., Polischuk O.V., Knap W., El Fatimy A. Broadening of the plasmon resonance due to plasmon-plasmon intermode scattering in terahertz high-electron-mobility transistors. Appl. Phys. Lett. 2008, 93:263503.
46. Shchepetov A., Gardès C., Roelens Y., Cappy A., Bollaert S., Boubanga-Tombet S., Teppe F., Coquillat D., Nadar S., Dyakonova N., Videlier H., Knap W., Seliuta D., Vadoklis R., Valusis G. Oblique modes effect on terahertz plasma wave resonant detection in InGaAs/InAlAs multichannel transistors. Appl. Phys. Lett. 2008, 92:242105.
47. Boubanga-Tombet S., Teppe F., Coquillat D., Nadar S., Dyakonova N., Videlier H., Knap W., Shchepetov A., Gardès C., Roelens Y., Cappy A., Bollaert S., Seliuta D., Vadoklis R., Valusis G. Current driven resonant plasma wave detection of terahertz radiation: Toward the Dyakonov-Shur instability. Appl. Phys. Lett. 2008, 92:212101.
48. Klimenko O.A., Mityagin Yu.A., Videlier H., Teppe F., Dyakonova N.V., Consejo C., Bollaert S., Murzin V.N., Knap W. Terahertz response of InGaAs field effect transistors in quantizing magnetic fields. Appl. Phys. Lett. 2010, 97:022111.