SCOPUS 정보 검색 플랫폼

Volumn 372, Issue , 2013, Pages 163-169

Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si(111)

(6) Munshi, Abdul Mazid a Dheeraj, Dasa L a Todorovic, Jelena a Van Helvoort, Antonius T J a Weman, Helge a Fimland, Bjørn Ove a

a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Norway)

Author keywords

A1. Crystal structure; A1. Nanowires; A3. Contact angle; A3. Molecular beam epitaxy; A3. Self catalyzed; B2. Semiconducting gallium arsenide

Indexed keywords

CRYSTAL PHASE; CRYSTAL PHASIS; II-IV SEMICONDUCTORS; NANO-DEVICES; SELF-CATALYZED; SI(111) SUBSTRATE; VAPOR-LIQUID-SOLID TECHNIQUES; ZINC BLENDE;

CATALYSIS; CONTACT ANGLE; DROPS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; SEMICONDUCTOR DEVICES; SILICON; VAPORS; ZINC SULFIDE;

SEMICONDUCTING GALLIUM;

EID: 84876708316 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2013.03.004 Document Type: Article

Times cited : (54)

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