In-situ x-ray characterization of wurtzite formation in GaAs nanowires

Applied Physics Letters

Volumn 100, Issue 9, 2012, Pages

  Krogstrup, Peter ^a   Hannibal Madsen, Morten ^a   Hu, Wen ^b   Kozu, Miwa ^c   Nakata, Yuka ^c   Nygård, Jesper ^a   Takahasi, Masamitu ^b,c   Feidenhans'l, Robert ^a  

^a UNIVERSITY OF COPENHAGEN   (Denmark)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c UNIVERSITY OF HYOGO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM FLUXES; FORMATION RATES; GA-RICH CONDITIONS; GAAS; GROWTH INTERFACES; GROWTH STRUCTURES; IN-SITU; IN-SITU MONITORING; LIQUID DIFFUSION; NANOWIRE GROWTH; PHASE FORMATIONS; SI(111) SUBSTRATE; STRUCTURE FORMATIONS; TIME-SCALES; V/III RATIO; WURTZITE STRUCTURE; WURTZITES; X-RAY CHARACTERIZATION;

GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; ZINC SULFIDE;

SEMICONDUCTING GALLIUM;

EID: 84857942192     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3688489     Document Type: Article

References (31)

1. R. S. Wagner and W. S. Ellis, Appl. Phys. Lett. 4, 5 (1964). 10.1063/1.1753975
2. F. Glas, J.-C. Harmand, and G. Patriarche, Phys. Rev. Lett. 99, 146101 (2007). 10.1103/PhysRevLett.99.146101
3. R. E. Algra, M. A. Verheijen, M. T. Borgström, L.-F. Feiner, G. Immink, W. J. P. van Enckevort, E. Vlieg, and E. P. A. M. Bakkers, Nature 456, 369 (2008). 10.1038/nature07570
4. J. Johansson, K. A. Dick, P. Caroff, M. E. Messing, J. Bolinsson, K. Deppert, and L. Samuelson, J. Phys. Chem. C 114, 3837 (2010). 10.1021/jp910821e
5. V. G. Dubrovskii, N. V. Sibirev, J. C. Harmand, and F. Glas, Phys. Rev. B 78, 235301 (2008). 10.1103/PhysRevB.78.235301
6. G. E. Cirlin, V. G. Dubrovskii, Yu. B. Samsonenko, A. D. Bouravleuv, K. Durose, Y. Y. Proskuryakov, B. Mendes, L. Bowen, M. A. Kaliteevski, R. A. Abrams, and D. Zeze, Phys. Rev. B 82, 035302 (2010). 10.1103/PhysRevB.82.035302
7. P. Krogstrup, S. Curiotto, E. Johnson, M. Aagesen, J. Nygrd, and D. Chatain, Phys. Rev. Lett. 106, 125505 (2011). 10.1103/PhysRevLett.106.125505
8. C.-Y. Wen, J. Tersoff, K. Hillerich, M. C. Reuter, J. H. Park, S. Kodambaka, E. A. Stach, and F. M. Ross, Phys. Rev. Lett. 107, 025503 (2011). 10.1103/PhysRevLett.107.025503
9. R. E. Algra, V. Vonk, D. Wermeille, W. J. Szweryn, M. A. Verheijen, W. J. P. van Enckevort, A. A. C. Bode, W. L. Noorduin, E. Tancini, A. E. F. de Jong, Nano Lett. 11, 1 (2011). 10.1021/nl1012568
10. V. Consonni, A. Trampert, L. Geelhaar, and H. Riechert, Appl. Phys. Lett. 99, 033102 (2011). 10.1063/1.3610964
11. D. Rudolph, S. Hertenberger, S. Bolte, W. Paosangthong, D. Spirkoska, M. Doblinger, M. Bichler, J. J. Finley, G. Abstreiter, and G. Koblmuller, Nano Lett. 11, 9 (2011). 10.1021/nl2019382
12. O. Landré, C. Bougerol, H. Renevier, and B. Daudin, Nanotechnology 20, 415602 (2009). 10.1088/0957-4484/20/41/415602
13. S. O. Mariager, C. B. Srensen, M. Aagesen, J. Nygrd, R. Feidenhans'l, and P. R. Willmott, Appl. Phys. Lett. 91, 083106 (2007). 10.1063/1.2769401
14. S. O. Mariager, S. L. Lauridsen, C. B. Srensen, A. Dohn, P. R. Willmott, J. Nygrd, and R. Feidenhans'l, Nanotechnology 21, 11 (2010). 10.1088/0957-4484/21/11/115603
15. M. Takahasi, Y. Yoneda, H. Inoue, N. Yamamoto, and J. Mizuki, Jpn. J. Appl. Phys. 41, 6247 (2002). 10.1143/JJAP.41.6247
16. H. You, J. Appl. Crystallogr. 32, 614 (1999). 10.1107/S0021889899001223
17. M. Takahasi and J. Mizuki, J. Synchrotron Rad. 5, 893 (1998). 10.1107/S0909049597016014
18. E. Vlieg, J. Appl. Crystallogr. 31, 198 (1998). 10.1107/S0021889897009990
19. S. H. Oh, M. F. Chisholm, Y. Kauffmann, W. D. Kaplan, W. Luo, M. Rühle, and C. Scheu, Science 330, 489 (2010). 10.1126/science.1190596
20. S. Ambrosini, M. Fanetti, V. Grillo, A. Franciosi, and S. Rubini, AIP Adv. 1, 042142 (2011). 10.1063/1.3664133
21. See supplementary material at http://dx.doi.org/10.1063/1.3688489 E-APPLAB-100-054209 for a detailed description of the growth conditions.
22. C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter, and A. Fontcuberta i Morral, Phys. Rev. B 77, 155326 (2008). 10.1103/PhysRevB.77.155326
23. P. Krogstrup, R. Popovitz-Biro, E. Johnson, M. H. Madsen, J. Nygrd, and H. Shtrikman, Nano Lett. 10, 4475 (2010). 10.1021/nl102308k
24. S. Plissard, K. A. Dick, G. Larrieu, S. Godey, A. Addad, X. Wallart, and P. Caroff, Nanotechnology 21, 385602 (2010). 10.1088/0957-4484/21/38/385602
25. D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M. H. Gass, A. L. Bleloch, S. Estrade, Phys. Rev. B 80, 245325 (2009). 10.1103/PhysRevB.80.245325
26. B. Ketterer, M. Heiss, E. Uccelli, and A. Fontcuberta i Morral, ACS Nano 5, 7585 (2011). 10.1021/nn202585j
27. K. W. Schwarz and J. Tersoff, Phys. Rev. Lett. 102, 206101 (2009). 10.1103/PhysRevLett.102.206101
28. G. Patriarche, F. Glas, M. Tchernycheva, C. Sartel, L. Largeau, and J-C Harmand, Nano Lett. 8, 6 (2008). 10.1021/nl080319y
29. T. Yamashita, T. Akiyama, K. Nakamura, and T. Ito, Physica E 42, 10 (2010). 10.1016/j.physe.2010.01.037
30. M. Galicka, M. Bukaa, R. Buczko, and P. Kacman, J. Phys.: Condens. Mat. 20, 454226 (2008). 10.1088/0953-8984/20/45/454226
31. K. A. Dick, P. Caroff, J. Bolinsson, M. E. Messing, J. Johansson, K. Deppert, L. R. Wallenberg, and L. Samuelson, Semicond. Sci. Technol. 25, 024009 (2010). 10.1088/0268-1242/25/2/024009