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Physical Review Letters

Volumn 107, Issue 2, 2011, Pages

Periodically changing morphology of the growth interface in Si, Ge, and GaP nanowires

(8) Wen, C Y a Tersoff, J b Hillerich, K c Reuter, M C b Park, J H d Kodambaka, S d Stach, E A a Ross, F M e

a PURDUE UNIVERSITY (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

c LUND UNIVERSITY (Sweden)

d UNIVERSITY OF CALIFORNIA (United States)

e NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT VISUALIZATION; EXPLICIT MODELS; GROWTH INTERFACES; NANOWIRE GROWTH; STEP FLOW; WIRE GROWTH;

CATALYSTS; GERMANIUM; VISUALIZATION;

NANOWIRES;

EID: 79961079164 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.107.025503 Document Type: Article

Times cited : (171)

References (25)

1
- 33751122778
- APPLAB 0003-6951 10.1063/1.1753975
- R.S. Wagner and W.C. Ellis, Appl. Phys. Lett. 4, 89 (1964). APPLAB 0003-6951 10.1063/1.1753975
- (1964) Appl. Phys. Lett. , vol.4 , pp. 89
- Wagner, R.S.¹ Ellis, W.C.²

2
- 33748593098
- Nanowire electronic and optoelectronic devices
- DOI 10.1016/S1369-7021(06)71650-9, PII S1369702106716509
- Y. Li, Mater. Today 9, 18 (2006). MATOBY 0096-4867 10.1016/S1369-7021(06) 71650-9 (Pubitemid 44380401)
- (2006) Materials Today , vol.9 , Issue.10 , pp. 18-27
- Li, Y.¹ Qian, F.² Xiang, J.³ Lieber, C.M.⁴

3
- 56949107839
- PCGMED 0960-8974 10.1016/j.pcrysgrow.2008.09.001
- K.A. Dick, Prog. Cryst. Growth Charact. Mater. 54, 138 (2008). PCGMED 0960-8974 10.1016/j.pcrysgrow.2008.09.001
- (2008) Prog. Cryst. Growth Charact. Mater. , vol.54 , pp. 138
- Dick, K.A.¹

4
- 40749085206
- Growth of nanowires
- DOI 10.1016/j.mser.2008.01.001, PII S0927796X08000028
- N. Wang, Y. Cai, and R.Q. Zhang, Mater. Sci. Eng., R 60, 1 (2008). MIGIEA 0927-796X 10.1016/j.mser.2008.01.001 (Pubitemid 351381404)
- (2008) Materials Science and Engineering R: Reports , vol.60 , Issue.1-6 , pp. 1-51
- Wang, N.¹ Cai, Y.² Zhang, R.Q.³

5
- 75649098165
- CHREAY 0009-2665 10.1021/cr900075v
- A.I. Hochbaum and P.D. Yang, Chem. Rev. 110, 527 (2010). CHREAY 0009-2665 10.1021/cr900075v
- (2010) Chem. Rev. , vol.110 , pp. 527
- Hochbaum, A.I.¹ Yang, P.D.²

6
- 42549153734
- Ledge-flow-controlled catalyst interface dynamics during Si nanowire growth
- DOI 10.1038/nmat2140, PII NMAT2140
- S. Hofmann, Nature Mater. NMAACR 1476-1122 7, 372 (2008). 10.1038/nmat2140 (Pubitemid 351585225)
- (2008) Nature Materials , vol.7 , Issue.5 , pp. 372-375
- Hofmann, S.¹ Sharma, R.² Wirth, C.T.³ Cervantes-Sodi, F.⁴ Ducati, C.⁵ Kasama, T.⁶ Dunin-Borkowski, R.E.⁷ Drucker, J.⁸ Bennett, P.⁹ Robertson, J.¹⁰

7
- 70849124686
- SCIEAS 0036-8075 10.1126/science.1178606
- C.-Y. Wen, Science 326, 1247 (2009). SCIEAS 0036-8075 10.1126/science.1178606
- (2009) Science , vol.326 , pp. 1247
- Wen, C.-Y.¹

8
- 76749151493
- NALEFD 1530-6984 10.1021/nl903362y
- C.-Y. Wen, Nano Lett. 10, 514 (2010). NALEFD 1530-6984 10.1021/nl903362y
- (2010) Nano Lett. , vol.10 , pp. 514
- Wen, C.-Y.¹

9
- 35148862079
- Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
- DOI 10.1103/PhysRevLett.99.146101
- F. Glas, J.-C. Harmand, and G. Patriarche, Phys. Rev. Lett. 99, 146101 (2007). PRLTAO 0031-9007 10.1103/PhysRevLett.99.146101 (Pubitemid 47549449)
- (2007) Physical Review Letters , vol.99 , Issue.14 , pp. 146101
- Glas, F.¹ Harmand, J.-C.² Patriarche, G.³

10
- 78650168630
- NALEFD 1530-6984 10.1021/nl101747z
- J. Wallentin, Nano Lett. 10, 4807 (2010). NALEFD 1530-6984 10.1021/nl101747z
- (2010) Nano Lett. , vol.10 , pp. 4807
- Wallentin, J.¹

11
- 57749107549
- PRBMDO 1098-0121 10.1103/PhysRevB.78.235301
- V.G. Dubrovskii, Phys. Rev. B PRBMDO 1098-0121 78, 235301 (2008). 10.1103/PhysRevB.78.235301
- (2008) Phys. Rev. B , vol.78 , pp. 235301
- Dubrovskii, V.G.¹

12
- 79952592921
- NALEFD 1530-6984 10.1021/nl104238d
- V.G. Dubrovskii, Nano Lett. 11, 1247 (2011). NALEFD 1530-6984 10.1021/nl104238d
- (2011) Nano Lett. , vol.11 , pp. 1247
- Dubrovskii, V.G.¹

13
- 78149261867
- PRLTAO 0031-9007 10.1103/PhysRevLett.105.195502
- C.-Y. Wen, Phys. Rev. Lett. 105, 195502 (2010). PRLTAO 0031-9007 10.1103/PhysRevLett.105.195502
- (2010) Phys. Rev. Lett. , vol.105 , pp. 195502
- Wen, C.-Y.¹

14
- 77958177667
- SCIEAS 0036-8075 10.1126/science.1190596
- S.H. Oh, Science 330, 489 (2010). SCIEAS 0036-8075 10.1126/science. 1190596
- (2010) Science , vol.330 , pp. 489
- Oh, S.H.¹

15
- 79952851972
- 1932-7447 10.1021/jp1095882
- A.D. Gamalski, C. Ducati, and S. Hofmann, J. Phys. Chem. C 115, 4413 (2011). 1932-7447 10.1021/jp1095882
- (2011) J. Phys. Chem. C , vol.115 , pp. 4413
- Gamalski, A.D.¹ Ducati, C.² Hofmann, S.³

16
- 79851474458
- NALEFD 1530-6984 10.1021/nl1027815
- K.W. Schwarz and J. Tersoff, Nano Lett. 11, 316 (2011). NALEFD 1530-6984 10.1021/nl1027815
- (2011) Nano Lett. , vol.11 , pp. 316
- Schwarz, K.W.¹ Tersoff, J.²

17
- 71449085293
- PLEEE8 1539-3755 10.1103/PhysRevE.80.050601
- T. Haxhimali, Phys. Rev. E PLEEE8 1539-3755 80, 050601(R) (2009). 10.1103/PhysRevE.80.050601
- (2009) Phys. Rev. e , vol.80
- Haxhimali, T.¹

18
- 79961068774
- JMREEE 0884-2914
- S. Ryu and W. Cai, J. Mater. Res. (to be published). JMREEE 0884-2914
- J. Mater. Res.
- Ryu, S.¹ Cai, W.²

19
- 58449110066
- ADVMEW 0935-9648 10.1002/adma.200800440
- B.A. Wacaser, Adv. Mater. 21, 153 (2009). ADVMEW 0935-9648 10.1002/adma.200800440
- (2009) Adv. Mater. , vol.21 , pp. 153
- Wacaser, B.A.¹

20
- 28844484557
- Sawtooth faceting in silicon nanowires
- DOI 10.1103/PhysRevLett.95.146104, 146104
- F.M. Ross, J. Tersoff, and M.C. Reuter, Phys. Rev. Lett. 95, 146104 (2005). PRLTAO 0031-9007 10.1103/PhysRevLett.95.146104 (Pubitemid 41777594)
- (2005) Physical Review Letters , vol.95 , Issue.14 , pp. 1-4
- Ross, F.M.¹ Tersoff, J.² Reuter, M.C.³

21
- 70349956649
- NALEFD 1530-6984 10.1021/nl9015792
- B.A. Wacaser, Nano Lett. 9, 3296 (2009). NALEFD 1530-6984 10.1021/nl9015792
- (2009) Nano Lett. , vol.9 , pp. 3296
- Wacaser, B.A.¹

22
- 34248214061
- Germanium nanowire growth below the eutectic temperature
- DOI 10.1126/science.1139105
- S. Kodambaka, Science 316, 729 (2007). SCIEAS 0036-8075 10.1126/science.1139105 (Pubitemid 46717677)
- (2007) Science , vol.316 , Issue.5825 , pp. 729-732
- Kodambaka, S.¹ Tersoff, J.² Reuter, M.C.³ Ross, F.M.⁴

23
- 66049117299
- PRLTAO 0031-9007 10.1103/PhysRevLett.102.206101
- K.W. Schwarz and J. Tersoff, Phys. Rev. Lett. 102, 206101 (2009). PRLTAO 0031-9007 10.1103/PhysRevLett.102.206101
- (2009) Phys. Rev. Lett. , vol.102 , pp. 206101
- Schwarz, K.W.¹ Tersoff, J.²

24
- 0000381088
- AMATEB 0956-7151 10.1016/0956-7151(95)00134-HAnother possible explanation for rapid equilibration of the edge facet would be if the truncated region is atomically rough rather than faceted, as occurs in metals
- W.C. Carter, Acta Metall. Mater. 43, 4309 (1995). AMATEB 0956-7151 10.1016/0956-7151(95)00134-H
- (1995) Acta Metall. Mater. , vol.43 , pp. 4309
- Carter, W.C.¹

25
- 0000583861
- PRLTAO 0031-9007 10.1103/PhysRevLett.70.1143]. However, thermal roughening is not to our knowledge expected in typical semiconductors at nanowire growth temperatures.
- J. Tersoff, A.W. Denier van der Gon, and R.M. Tromp, Phys. Rev. Lett. 70, 1143 (1993) PRLTAO 0031-9007 10.1103/PhysRevLett.70.1143
- (1993) Phys. Rev. Lett. , vol.70 , pp. 1143
- Tersoff, J.¹ Gon Der Van Denier, A.W.² Tromp, R.M.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.