Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy

Nanotechnology

Volumn 19, Issue 27, 2008, Pages

  Jabeen, Fauzia ^a,b   Grillo, Vincenzo ^a   Rubini, Silvia ^a   Martelli, Faustino ^a  

^a LABORATORIO TASC   (Italy)

^b SINCROTRONE TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DROP FORMATION; DROPS; ECOLOGY; ELECTRIC WIRE; EPITAXIAL GROWTH; FLUID MECHANICS; GALLIUM ALLOYS; METALS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON;

FREE END; GROWTH PROCESSES; LATTICE (CO); LATTICE STRUCTURES; METAL CATALYSTS; PRE-DEPOSITION; SELF CATALYZED GROWTH; SELF-ASSEMBLED; SI(1 0 0 ); TWO TYPES; WURTZITE (WZ); ZINC BLENDE (ZB);

MOLECULAR BEAM EPITAXY;

METAL; NANOWIRE; SILICON;

ARTICLE; CATALYST; CRYSTAL STRUCTURE; PRIORITY JOURNAL;

EID: 48249156230     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/27/275711     Document Type: Article

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