Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 20, 2005, Pages

  Dubrovskii, V G ^a   Cirlin, G E ^a,b   Soshnikov, I P ^a   Tonkikh, A A ^a,b   Sibirev, N V ^b   Samsonenko, Yu B ^a,b   Ustinov, V M ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33344467675     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.205325     Document Type: Article

References (26)

1. K. Hiruma, M. Yazawa, T. Katsuyama, K. Ogawa, K. Haraguchi, and M. Koguchi, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1063/1.359026 77, 447 (1995).
2. Y. Cui and C. M. Lieber. Science SCIEAS 0036-8075 91, 851 (2000).
3. Y. Arakawa, T. Yamauchi, and J. N. Schulman, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.43.4732 43, 4732 (1991).
4. J.-B. Xia and K. W. Cheah, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.55.15688 55, 15688 (1997).
5. Y. Cui, J. L. Lauhon, M. S. Gudiksen, J. Wang, and C. M. Lieber, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1363692 78, 2214 (2001).
6. X. Duan, J. Wang, and C. M. Lieber, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125956 76, 1116 (2000).
7. T. I. Kamins, X. Li, and R. Stanley Williams, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1534616 82, 263 (2003).
8. J. Westwater, D. P. Gosain, S. Tomiya, S. Usui, and H. Ruda, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.589291 15, 554 (1997).
9. P. Finnie and Y. Homma, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(98)01420-1 201, 604 (1999).
10. B. J. Ohlsson, M. T. Björk, M. H. Magnusson, K. Deppert, and L. Samuelson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1418446 79, 3335 (2001).
11. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1753975 4, 89 (1964).
12. D. N. Mcllroy, A. Alkhateeb, D. Zhang, D. E. Aston, A. C. Marcy, and M. G. Norton, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/16/12/ R02 16, R415 (2004).
13. Handbook of Crystal Growth, v.2: Bulk Crystal Growth, edited by, D. T. J. Hurle, (Elsevier, North-Holland, 1994).
14. A. A. Tonkikh, G. E. Cirlin, Yu. B. Samsonenko, I. P. Soshnikov, and V. M. Ustinov, Semiconductors SMICES 1063-7826 10.1134/1.1808832 38, 1217 (2004).
15. E. I. Givargizov, J. Cryst. Growth JCRGAE 0022-0248 10.1016/0022-0248(75) 90105-0 31, 20 (1975).
16. E. I. Givargizov and A. A. Chernov, Kristallografiya KRISAJ 0023-4761 18, 147 (1973).
17. V. G. Dubrovskii and N. V. Sibirev, Phys. Rev. E PLEEE8 1063-651X 10.1103/PhysRevE.70.031604 70, 031604 (2004).
18. A. Y. Cho and J. R. Arthur, Prog. Solid State Chem. PSSTAW 0079-6786 10.1016/0079-6786(75)90005-9 10, 157 (1975).
19. L. Schubert, P. Werner, N. D. Zakharov, G. Gerth, F. M. Kolb, L. Long, U. Gösele, and T. Y. Tan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1762701 84, 4968 (2004).
20. G. W. Sears, Acta Metall. AMETAR 0001-6160 1, 457 (1953).
21. G. W. Sears Acta Metall. AMETAR 0001-6160 10.1016/0001-6160(55)90042-0 3, 367 (1955).
22. W. Dittmar and K. Neumann, in Growth and Perfection of Crystals, edited by, R. H. Doremus,, B. W. Roberts, and D. Turnball (Wiley, New York, 1958).
23. W. Dittmar and K. Neumann, Z. Elektrochem. ZEELAI 0372-8382 64, 297 (1960).
24. S. Koshiba, Y. Nakamura, M. Tsuchiya, H. Noge, H. Kano, Y. Nagamune, T. Noda, and H. Sakaki, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.357364 76, 4138 (1994).
25. S. A. Kukushkin and A. V. Osipov, Prog. Surf. Sci. PSSFBP 0079-6816 10.1016/0079-6816(96)82931-5 51, 1 (1996).
26. T. Takebe, M. Fujii, T. Yamamoto, K. Fujita, and T. Watanabe, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.365548 81, 7273 (1997).