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Volumn 82, Issue 3, 2010, Pages

Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

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EID: 77956698214     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.035302     Document Type: Article
Times cited : (203)

References (40)
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    • Surface influence on stability and structure of hexagon-shaped III-V semiconductor nanorods
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    • Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.