Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM

Micron

Volumn 44, Issue 1, 2013, Pages 254-260

  Kauko, H ^a   Grieb, T ^b   Bjorge R ^a   Schowalter, M ^b   Munshi, A M ^a   Weman, H ^a   Rosenauer, A ^b   van Helvoort, A T J ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

GaAsSb; HAADF STEM; Heterostructures; Nanowires; Quantitative microscopy

Indexed keywords

ATOMIC DISPLACEMENT; COMPOSITIONAL ANALYSIS; COMPOSITIONAL CHARACTERIZATION; CROSS-SECTIONAL SHAPE; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GAAS; GAASSB; HAADF-STEM; HIGH-ANGLE ANNULAR DARK FIELDS; IMAGE INTENSITIES; INCIDENT BEAMS; INTENSITY PROFILES; MULTI SLICES; OUTER SURFACE; QUANTITATIVE MICROSCOPY; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

ANTIMONY; GALLIUM ARSENIDE; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

NANOWIRES;

EID: 84870704624     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2012.07.002     Document Type: Article

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