Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates

Journal of Applied Physics

Volumn 109, Issue 9, 2011, Pages

  Ambrosini, S ^a,b,c   Fanetti, M ^a,b   Grillo, V ^d,e   Franciosi, A ^a,b,c   Rubini, S ^a  

^a LABORATORIO TASC   (Italy)

^b SINCROTRONE TRIESTE   (Italy)

^c UNIVERSITY OF TRIESTE   (Italy)

^d CNR   (Italy)

^e NONE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT DEPOSITION; GAAS; GAAS SUBSTRATES; GAAS(001); GAAS(1 0 0); HIGH DENSITY; NANOWIRE GROWTH; PHOTOLUMINESCENCE PEAK; PRE-DEPOSITION; SELF-CATALYZED; SI LAYER; SI OXIDE; SUBSTRATE PREPARATION; SUBSTRATE SURFACE; SUBSTRATE TEMPERATURE; VAPOR-LIQUID-SOLID GROWTH MECHANISM; X RAY PHOTOEMISSION SPECTROSCOPY; ZINC-BLENDE;

CATALYSIS; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES;

GALLIUM ALLOYS;

EID: 79959529686     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3579449     Document Type: Article

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