Vertically aligned GaAs nanowires on graphite and few-layer graphene: Generic model and epitaxial growth

Nano Letters

Volumn 12, Issue 9, 2012, Pages 4570-4576

  Munshi, A Mazid ^a   Dheeraj, Dasa L ^a   Fauske, Vidar T ^a   Kim, Dong Chul ^a   Van Helvoort, Antonius T J ^a   Fimland, Bjørn Ove ^a   Weman, Helge ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

GaAs; Graphene; hybrid structures; molecular beam epitaxy; nanowire; vapor liquid solid

Indexed keywords

ATOMIC MODELS; CONTACT AREAS; CROSS-SECTIONAL SHAPE; EPITAXIAL RELATIONSHIPS; FEW-LAYER GRAPHENE; GAAS; GENERIC MODELS; GRAPHITIC SUBSTRATES; GROWTH STRATEGY; HIGH-QUALITY MATERIALS; HYBRID STRUCTURE; LOW-COST SOLAR CELLS; MODEL SYSTEM; OPTOELECTRONIC APPLICATIONS; RELATIVE ORIENTATION; SELF-CATALYZED; SELF-CATALYZED GROWTH; VAPOR-LIQUID-SOLID; VAPOR-LIQUID-SOLID TECHNIQUES; VERTICALLY ALIGNED;

CATALYSIS; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; GALLIUM ARSENIDE; GRAPHENE; GRAPHITE; LIQUIDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; VAPORS;

NANOWIRES;

GALLIUM; GALLIUM ARSENIDE; GRAPHITE; NANOTUBE; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; GALLIUM; GRAPHITE; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTUBES; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 84866314508     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3018115     Document Type: Article

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