-
4
-
-
0004071496
-
-
3rd ed. (IEEE Press, Piscataway, NJ), Cha
-
D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (IEEE Press, Piscataway, NJ, 2006), Chap..
-
(2006)
Semiconductor Material and Device Characterization
-
-
Schroder, D.K.1
-
5
-
-
0022120122
-
-
10.1109/EDL.1985.26185
-
W. M. Loh, S. E. Swirhun, E. Crabbe, K. Saraswat, and R. M. Swanson, IEEE Electron Device Lett. 6, 441 (1985). 10.1109/EDL.1985.26185
-
(1985)
IEEE Electron Device Lett.
, vol.6
, pp. 441
-
-
Loh, W.M.1
Swirhun, S.E.2
Crabbe, E.3
Saraswat, K.4
Swanson, R.M.5
-
6
-
-
59849090677
-
-
10.1109/TSM.2008.2010746
-
N. Stavitski, J. H. Klootwijk, H. W. van Zeijl, A. Y. Kovalgin, and R. A. M. Wolters, IEEE Trans. Semicond. Manuf. 22, 146 (2009). 10.1109/TSM.2008. 2010746
-
(2009)
IEEE Trans. Semicond. Manuf.
, vol.22
, pp. 146
-
-
Stavitski, N.1
Klootwijk, J.H.2
Van Zeijl, H.W.3
Kovalgin, A.Y.4
Wolters, R.A.M.5
-
9
-
-
0000446759
-
-
10.1063/1.120872
-
M. C. Hersam, A. C. F. Hoole, S. J. OShea, and M. E. Welland, Appl. Phys. Lett. 72, 915 (1998). 10.1063/1.120872
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 915
-
-
Hersam, M.C.1
Hoole, A.C.F.2
Oshea, S.J.3
Welland, M.E.4
-
10
-
-
17944365907
-
-
10.1063/1.1891306
-
M. Nakamura, N. Goto, N. Ohashi, M. Sakai, and K. Kudo, Appl. Phys. Lett. 86, 122112 (2005). 10.1063/1.1891306
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 122112
-
-
Nakamura, M.1
Goto, N.2
Ohashi, N.3
Sakai, M.4
Kudo, K.5
-
12
-
-
38849201768
-
-
10.1038/nphys781
-
J. Martin, N. Akerman, G. Ulbricht, T. Lohmann, J. H. Smet, K. Von Klitzing, and A. Yacoby, Nature Phys. 4, 144 (2008). 10.1038/nphys781
-
(2008)
Nature Phys.
, vol.4
, pp. 144
-
-
Martin, J.1
Akerman, N.2
Ulbricht, G.3
Lohmann, T.4
Smet, J.H.5
Von Klitzing, K.6
Yacoby, A.7
-
13
-
-
9544225077
-
-
10.1016/j.sse.2004.08.006
-
S. E. Mohney, Y. Wang, M. A. Cabassi, K. K. Lew, S. Dey, J. M. Redwing, and T. S. Mayer, Solid-State Electron. 49, 227 (2005). 10.1016/j.sse.2004.08.006
-
(2005)
Solid-State Electron.
, vol.49
, pp. 227
-
-
Mohney, S.E.1
Wang, Y.2
Cabassi, M.A.3
Lew, K.K.4
Dey, S.5
Redwing, J.M.6
Mayer, T.S.7
-
14
-
-
72849122590
-
-
10.1021/nl901572a
-
Y. J. Yu, Y. Zhao, S. Ryu, L. E. Brus, K. S. Kim, and P. Kim, Nano Lett. 9, 3430 (2009). 10.1021/nl901572a
-
(2009)
Nano Lett.
, vol.9
, pp. 3430
-
-
Yu, Y.J.1
Zhao, Y.2
Ryu, S.3
Brus, L.E.4
Kim, K.S.5
Kim, P.6
-
16
-
-
33749505372
-
-
in (IEEE), Cat. No. 06CH37771
-
N. Stavitski, M. J. H. van Dal, R. A. M. Wolters, A. Y. Kovalgin, and J. Schmitz, in Proceedings of the 2006 International Conference on Microelectronic Test Structures (IEEE, 2006), p. 13, Cat. No. 06CH37771.
-
(2006)
Proceedings of the 2006 International Conference on Microelectronic Test Structures
, pp. 13
-
-
Stavitski, N.1
Van Dal, M.J.H.2
Wolters, R.A.M.3
Kovalgin, A.Y.4
Schmitz, J.5
-
17
-
-
78651283052
-
-
10.1063/1.3530437
-
K. Martens, R. Rooyackers, A. Firrincieli, B. Vincent, R. Loo, B. De Jaeger, M. Meuris, P. Favia, H. Bender, B. Douhard, W. Vandervorst, E. Simoen, M. Jurczak, D. J. Wouters, and J. A. Kittl, Appl. Phys. Lett. 98, 013504 (2011). 10.1063/1.3530437
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 013504
-
-
Martens, K.1
Rooyackers, R.2
Firrincieli, A.3
Vincent, B.4
Loo, R.5
De Jaeger, B.6
Meuris, M.7
Favia, P.8
Bender, H.9
Douhard, B.10
Vandervorst, W.11
Simoen, E.12
Jurczak, M.13
Wouters, D.J.14
Kittl, J.A.15
-
18
-
-
0036679147
-
-
10.1063/1.1491584
-
V. Kumar, L. Zhou, D. Selvanathan, and I. Adesida, J. Appl. Phys. 92, 1712 (2002). 10.1063/1.1491584
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 1712
-
-
Kumar, V.1
Zhou, L.2
Selvanathan, D.3
Adesida, I.4
-
19
-
-
31944437025
-
-
10.1063/1.2163454
-
E. Stern, G. Cheng, M. P. Young, and M. A. Reed, Appl. Phys. Lett. 88, 053106 (2006). 10.1063/1.2163454
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 053106
-
-
Stern, E.1
Cheng, G.2
Young, M.P.3
Reed, M.A.4
-
20
-
-
0000082345
-
-
10.1063/1.1308527
-
H. K. Kim, S. H. Han, T. Y. Seong, and W. K. Choi, Appl. Phys. Lett. 77, 1647 (2000). 10.1063/1.1308527
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 1647
-
-
Kim, H.K.1
Han, S.H.2
Seong, T.Y.3
Choi, W.K.4
-
22
-
-
51649149954
-
-
10.1007/BF02652180
-
S. Rang, R. Chow, R. H. Wilson, B. Gorowitz, and A. G. Williams, J. Electron. Mater. 17, 213 (1988). 10.1007/BF02652180
-
(1988)
J. Electron. Mater.
, vol.17
, pp. 213
-
-
Rang, S.1
Chow, R.2
Wilson, R.H.3
Gorowitz, B.4
Williams, A.G.5
-
23
-
-
77955182896
-
-
in (ECTC)
-
P. Gueguen, L. Di Cioccio, P. Morfouli, M. Zussy, J. Dechamp, L. Bally, and L. Clavelier, in Proceedings IEEE 60th Electronic Components and Technology Conference (ECTC, 2010), p. 878.
-
(2010)
Proceedings IEEE 60th Electronic Components and Technology Conference
, pp. 878
-
-
Gueguen, P.1
Di Cioccio, L.2
Morfouli, P.3
Zussy, M.4
Dechamp, J.5
Bally, L.6
Clavelier, L.7
-
24
-
-
9744280432
-
-
10.1063/1.1810210
-
T. Nakayama, H. Miyamoto, Y. Ando, Y. Okamoto, T. Inoue, K. Hataya, and M. Kuzuhara, Appl. Phys. Lett. 85, 3775 (2004). 10.1063/1.1810210
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 3775
-
-
Nakayama, T.1
Miyamoto, H.2
Ando, Y.3
Okamoto, Y.4
Inoue, T.5
Hataya, K.6
Kuzuhara, M.7
-
25
-
-
84871580986
-
-
10.7567/APEX.6.016501
-
S. Arulkumaran, G. I. Ng, S. Vicknesh, H. Wang, K. S. Ang, C. M. Kumar, K. L. Teo, and K. Ranjan, Appl. Phys. Express 6, 016501 (2013). 10.7567/APEX.6.016501
-
(2013)
Appl. Phys. Express
, vol.6
, pp. 016501
-
-
Arulkumaran, S.1
Ng, G.I.2
Vicknesh, S.3
Wang, H.4
Ang, K.S.5
Kumar, C.M.6
Teo, K.L.7
Ranjan, K.8
|