Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack

Applied Physics Express

Volumn 6, Issue 1, 2013, Pages

  Arulkumaran, Subramaniam ^a   Ng, Geok Ing ^b   Vicknesh, Sahmuganathan ^a   Wang, Hong ^b   Ang, Kian Siong ^a   Kumar, Chandramohan Manoj ^a   Teo, Khoon Leng ^a   Ranjan, Kumud ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CMOS COMPATIBLE; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONTACT PROCESS; CURRENT COLLAPSE; DIRECT-CURRENT; FIGURE OF MERITS; GAN HEMTS; METAL STACKS; MICROWAVE PERFORMANCE; SUBMICRON;

DIELECTRIC DEVICES; ELECTRIC CONTACTORS; GALLIUM NITRIDE; GOLD; OHMIC CONTACTS; SILICON;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84871580986     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.6.016501     Document Type: Article

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