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Volumn 368, Issue 1, 2013, Pages 86-92
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The effect of TEOS plasma parameters on the silicon dioxide deposition mechanisms
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Author keywords
Electron impact; Oxidation; PECVD; Plasma; Silicon dioxide film
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Indexed keywords
CHEMICAL COMPOSITIONS;
ELECTRON IMPACT;
FILM CHARACTERISTICS;
MECHANISM OF DEPOSITIONS;
PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION;
RADIO FREQUENCY POWER;
SILICON DIOXIDE FILM;
TETRAETHYL ORTHOSILICATES;
ARGON;
ATOMIC FORCE MICROSCOPY;
DEPOSITION;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
ORGANOMETALLICS;
OXIDATION;
PLASMA DEVICES;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICA;
VAPORS;
PLASMAS;
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EID: 84876098728
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2013.03.008 Document Type: Article |
Times cited : (51)
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References (28)
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