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Volumn 368, Issue 1, 2013, Pages 86-92

The effect of TEOS plasma parameters on the silicon dioxide deposition mechanisms

Author keywords

Electron impact; Oxidation; PECVD; Plasma; Silicon dioxide film

Indexed keywords

CHEMICAL COMPOSITIONS; ELECTRON IMPACT; FILM CHARACTERISTICS; MECHANISM OF DEPOSITIONS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; RADIO FREQUENCY POWER; SILICON DIOXIDE FILM; TETRAETHYL ORTHOSILICATES;

EID: 84876098728     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2013.03.008     Document Type: Article
Times cited : (51)

References (28)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.