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Volumn 165, Issue 1-2, 2009, Pages 64-66
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A comparative study of SiO2 deposited by PECVD and thermal method as passivation for multicrystalline silicon solar cells
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Author keywords
Silicon oxide; Solar cells; Surface passivation
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Indexed keywords
OPEN CIRCUIT VOLTAGE;
PASSIVATION;
PLASMA CVD;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
REFRACTIVE INDEX;
SILICA;
SILICON SOLAR CELLS;
SILICON WAFERS;
SOLAR POWER GENERATION;
THERMOOXIDATION;
TITANIUM DIOXIDE;
CHEMICAL VAPOR DEPOSITION METHODS;
COMPARATIVES STUDIES;
MULTI-CRYSTALLINE SILICON SOLAR CELLS;
P-TYPE;
SILICON DIOXIDE LAYERS;
SURFACE PASSIVATION;
SURFACE PASSIVATION EFFECTS;
THERMAL;
THERMAL METHODS;
THERMAL OXIDATION PROCESS;
SILICON OXIDES;
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EID: 71749092329
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2009.03.001 Document Type: Article |
Times cited : (35)
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References (8)
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