Hollow waveguides with low intrinsic photoluminescence fabricated with PECVD silicon nitride and silicon dioxide films

IEEE Photonics Technology Letters

Volumn 23, Issue 20, 2011, Pages 1466-1468

  Holmes, Matthew R ^a   Liu, Shuo ^b   Keeley, Jared ^a   Jenkins, Micah ^a   Leake, Kaelyn ^b   Schmidt, Holger ^b   Hawkins, Aaron R ^a  

^a Brigham Young University   (United States)

^b University of California Santa Cruz   (United States)

Author keywords

Anti resonant reflecting optical waveguides (ARROWs); low intrinsic photoluminescence (PL); low temperature silicon nitride (LT SiN); plasma enhanced chemical vapor deposition (PECVD)

Indexed keywords

ALTERNATING LAYERS; ANTI-RESONANCE; ANTIRESONANT REFLECTING OPTICAL WAVEGUIDES; HIGH TEMPERATURE; HOLLOW CORES; HOLLOW WAVEGUIDES; LOW INTRINSIC PHOTOLUMINESCENCE (PL); LOW TEMPERATURES; LOW-TEMPERATURE SILICONS; PECVD SILICON NITRIDE; SILICON DIOXIDE FILM; SPECTROSCOPY MEASUREMENTS;

CIRCULAR WAVEGUIDES; FABRICATION; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILICA; SILICON NITRIDE; SILICON OXIDES; SOLID STATE LASERS;

CHEMICAL VAPOR DEPOSITION;

EID: 80053249354     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2162625     Document Type: Article

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