Atmospheric pressure PECVD of SiO2 thin film at a low temperature using HMDS/O2/He/Ar

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 4065-4069

  Kim, Y S ^a   Lee, J H ^a   Lim, J T ^a   Park, J B ^a   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Atmospheric pressure; Deposition; Hexamethyldisilazane (HMDS); Silicon dioxide

Indexed keywords

ATMOSPHERIC PRESSURE PLASMAS; CHEMICAL VAPORS; DIELECTRIC BARRIER DISCHARGES; FILM CHARACTERISTICS; HEXAMETHYLDISILAZANE (HMDS); LOW TEMPERATURES; OPTIMIZED FLOWS; OXYGEN FLOW RATES; PLATE TYPES; SILICON DIOXIDE;

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; ATMOSPHERICS; FLOW RATE; GAS MIXTURES; GAS PERMEABLE MEMBRANES; HELIUM; OXYGEN; PLASMA DEPOSITION; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON OXIDES; SURFACE ROUGHNESS; THIN FILM DEVICES; THIN FILMS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 65449137474     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.137     Document Type: Article

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