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Volumn 188-189, Issue 1-3 SPEC.ISS., 2004, Pages 314-318

Influence of process parameters on the properties of TEOS-PECVD-grown SiO2 films

Author keywords

Film stress; Process parameters; Refractive index; SiO2; TEOS PECVD

Indexed keywords

ELLIPSOMETRY; OPTOELECTRONIC DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; THIN FILMS;

EID: 14644404978     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.08.051     Document Type: Article
Times cited : (4)

References (18)
  • 9
    • 14644445555 scopus 로고    scopus 로고
    • Fabrication of Plasma enhanced chemical vapor deposition system and growth of thin films using PECVD
    • PhD thesis, North Maharashtra University, Jalgaon, India, Dec
    • A.M. Mahajan, PhD thesis, Fabrication of Plasma enhanced chemical vapor deposition system and growth of thin films using PECVD, North Maharashtra University, Jalgaon, India, Dec. 2002.
    • (2002)
    • Mahajan, A.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.