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Volumn 188-189, Issue 1-3 SPEC.ISS., 2004, Pages 314-318
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Influence of process parameters on the properties of TEOS-PECVD-grown SiO2 films
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Author keywords
Film stress; Process parameters; Refractive index; SiO2; TEOS PECVD
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Indexed keywords
ELLIPSOMETRY;
OPTOELECTRONIC DEVICES;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
REFRACTIVE INDEX;
THIN FILMS;
CHAMBER PRESSURE;
MASS FLOW RATIO;
SILICON DIOXIDE FILMS;
TETRAETHOXYSILANE (TEOS);
SILICA;
FILM;
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EID: 14644404978
PISSN: 02578972
EISSN: None
Source Type: Journal
DOI: 10.1016/j.surfcoat.2004.08.051 Document Type: Article |
Times cited : (4)
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References (18)
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