SiO2 films deposited by APCVD with a TEOS/Ozone mixture and its application to the gate dielectric of TFTs

Journal of the Electrochemical Society

Volumn 157, Issue 2, 2010, Pages

  Kim, Jaehong ^a   Jung, Sungwook ^a   Jang, Kyungsoo ^a   Park, Hyungsik ^a   Cho, Jaehyun ^a   Lee, Wonbaek ^a   Gong, Daeyoung ^a   Choi, Byoungdeog ^a   Kim, Youngkuk ^a   Park, Jinju ^a   Kim, Kwangyeol ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; ELECTRICAL PROPERTY; FABRICATED DEVICE; FIELD-EFFECT MOBILITIES; GATE INSULATOR; HIGH QUALITY; LOW COSTS; LOW TEMPERATURE POLYCRYSTALLINE SILICON; LOW TEMPERATURE PROCESSING; LOW TEMPERATURES; OH CONTENTS; PROMISING MATERIALS; REACTANT GAS; SILICON DIOXIDE; SUBTHRESHOLD SWING; TETRAETHYL ORTHOSILICATES;

ATMOSPHERIC PRESSURE; ELECTRIC PROPERTIES; FILMS; GATE DIELECTRICS; GATES (TRANSISTOR); OZONE; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THIN FILM TRANSISTORS;

SILICON OXIDES;

EID: 73849118637     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3267039     Document Type: Article

References (15)

1. S. Nguyen, D. Dobuzinsky, D. Harmon, R. Gleason, and S. Fridmann, J. Electrochem. Soc. 0013-4651, 137, 2209 (1990). 10.1149/1.2086914
2. C. P. Chang, C. S. Pai, and J. J. Hsieh, J. Appl. Phys. 0021-8979, 67, 2119 (1990). 10.1063/1.345546
3. A. C. Carlson, T. T. Wu, and H. K. Liang, J. Electrochem. Soc. 0013-4651, 140, 774 (1993). 10.1149/1.2056157
4. K. Ishii, Y. Ohki, and H. Nishikawa, J. Appl. Phys. 0021-8979, 76, 5418 (1994). 10.1063/1.357196
5. G. Tochitani, M. Shimozuma, and H. Tagashira, J. Vac. Sci. Technol. A 0734-2101, 11, 400 (1993). 10.1116/1.578743
6. S. Rojas, A. Modelli, W. S. Wu, A. Borghesi, and B. Pivac, J. Vac. Sci. Technol. B 1071-1023, 8, 1177 (1990). 10.1116/1.584937
7. H. P. W. Hey, B. G. Sluijk, and D. G. Hemmes, Solid State Technol., 33, 139 (1990).
8. S. B. Desu, J. Am. Ceram. Soc. 0002-7820, 72, 1615 (1989). 10.1111/j.1151-2916.1989.tb06292.x
9. F. S. Becker, D. Pawlik, H. Anzinger, and A. Spitzer, J. Vac. Sci. Technol. B 1071-1023, 5, 1555 (1987). 10.1116/1.583673
10. C. -C. Tsai, H. -H. Chen, B. -T. Chen, and H. -C. Cheng, IEEE Electron Device Lett. 0741-3106, 28, 599 (2007). 10.1109/LED.2007.899326 (Pubitemid 47040463)
11. I. A. Shareef, G. W. Rubloff, M. Anderle, W. N. Gill, J. Cotte, and D. H. Kim, J. Vac. Sci. Technol. B 1071-1023, 13, 1888 (1995). 10.1116/1.587830
12. H. Juárez, T. Díaz, M. Pacio, G. García S., E. Rosendo, M. Rubin, G. Romero, A. García, and C. Morales, Phys. Status Solidi C 1610-1634, 4, 1481 (2007). 10.1002/pssc.200674157
13. J. Lee, E. Chung, W. Moon, and D. H. Suh, Microelectron. Eng. 0167-9317, 83, 2001 (2006). 10.1016/j.mee.2006.03.003
14. Semiconductor Material and Device Characterization, 3rd ed., D. K. Schroder, Editor, Wiley-Interscience, New York (2006).
15. A. Boogaard, A. Y. Kovalgin, I. Brunets, A. A. I. Aarnink, J. Holleman, R. A. M. Wolters, and J. Schmitz, Surf. Coat. Technol. 0257-8972, 201, 8976 (2007). 10.1016/j.surfcoat.2007.04.039 (Pubitemid 47209379)