Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2342-2345

  Yang, Haigui ^a   Wang, Dong ^a   Nakashima, Hiroshi ^a   Hirayama, Kana ^a   Kojima, Satoshi ^a   Ikeura, Shogo ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Acceptor concentration; Defect passivation; Ge condensation; Interface trap density; SiGe on insulator

Indexed keywords

ACCEPTOR CONCENTRATIONS; DEFECT PASSIVATION; GE CONDENSATION; INTERFACE-TRAP DENSITY; SIGE ON INSULATOR;

ANNEALING; CONDENSATION; DEFECT DENSITY; DEFECTS; FIELD EFFECT TRANSISTORS; GERMANIUM; MOSFET DEVICES; PASSIVATION; PERSONAL DIGITAL ASSISTANTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON ALLOYS;

ALUMINUM;

EID: 76049125028     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.179     Document Type: Article

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