Temperature dependence of InGaN/GaN multiple quantum well based high efficiency solar cell

Solar Energy Materials and Solar Cells

Volumn 95, Issue 11, 2011, Pages 3124-3129

  Asgari, Asghar ^a,b   Khalili, Kh ^a  

^a UNIVERSITY OF TABRIZ   (Iran)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

III nitride materials; Multi quantum well solar cells; Temperature effects

Indexed keywords

HIGH-EFFICIENCY SOLAR CELLS; III-NITRIDE MATERIALS; INGAN/GAN; MULTIQUANTUM WELLS; NITRIDE MATERIALS; P-INGAN; POLARIZATION FIELD; ROOM TEMPERATURE; SOLAR CELL PARAMETERS; TEMPERATURE DEPENDENCE;

CONVERSION EFFICIENCY; EFFICIENCY; NANOSTRUCTURED MATERIALS; NITRIDES; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION;

QUANTUM EFFICIENCY;

EID: 80051543752     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.07.001     Document Type: Article

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