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Volumn 380, Issue 1-2, 2003, Pages 105-110
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A study of the material loss and other processes involved during annealing of GaN at growth temperatures
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Author keywords
[No Author keywords available]
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Indexed keywords
GALLIUM;
GALLIUM NITRATE;
NITROGEN;
OXYGEN;
PROTON;
ARTICLE;
ATOMIC FORCE MICROSCOPY;
ENERGY;
ENVIRONMENTAL TEMPERATURE;
EVAPORATION;
MATERIAL STATE;
QUANTITATIVE ANALYSIS;
RUTHERFORD BACKSCATTERING SPECTROMETRY;
SIMULATION;
SPECTROMETRY;
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EID: 0141433294
PISSN: 00092614
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cplett.2003.09.019 Document Type: Article |
Times cited : (24)
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References (27)
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