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Volumn 380, Issue 1-2, 2003, Pages 105-110

A study of the material loss and other processes involved during annealing of GaN at growth temperatures

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; GALLIUM NITRATE; NITROGEN; OXYGEN; PROTON;

EID: 0141433294     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2003.09.019     Document Type: Article
Times cited : (24)

References (27)
  • 19
    • 0004077682 scopus 로고    scopus 로고
    • Report IPP 9/113, Max-Plank-Institut fur Plasmaphysik, Garching, Germany
    • M. Mayer, SIMNRA Users Guide, Report IPP 9/113, Max-Plank-Institut fur Plasmaphysik, Garching, Germany, 1997-2001.
    • (1997) SIMNRA Users Guide
    • Mayer, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.