Influence of hydrogen on interstitial iron concentration in multicrystalline silicon during annealing steps

Journal of Applied Physics

Volumn 113, Issue 11, 2013, Pages

  Karzel, Philipp ^a   Frey, Alexander ^a   Fritz, Susanne ^a   Hahn, Giso ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ACTIVITIES; INTERSTITIAL IRON; LIFETIME MEASUREMENTS; MICROWAVE-INDUCED; MULTI-CRYSTALLINE SILICON; MULTICRYSTALLINE SILICON (MC-SI); ROOM TEMPERATURE; SURFACE PASSIVATION;

ANNEALING; POLYSILICON; SILICON NITRIDE; SILICON WAFERS;

IRON COMPOUNDS;

EID: 84875749336     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794852     Document Type: Article

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