Surface passivation effect of silicon substrates due to quinhydrone/ethanol treatment

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 10 A, 2001, Pages

  Takato, H ^a   Sakata, I ^a   Shimokawa, R ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Lifetime; Quinhydrone; Silicon; Surface passivation; Surface recombination velocity; PCD

Indexed keywords

ETHANOL; IODINE; MICROWAVES; PHOTOCONDUCTIVITY; SILICON; SUBSTRATES;

SURFACE PASSIVATION;

PASSIVATION;

EID: 0035483571     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1003     Document Type: Article

References (7)