Fundamental interactions of fe in silicon: First-principles theory

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 233-240

  Estreicher, S K ^a   Sanati, M ^a   Gonzalez Szwacki, N ^a  

^a TEXAS TECH UNIVERSITY   (United States)

Author keywords

Hydrogen; Iron; Passivation; Self interstitial; Theory; Vacancy

Indexed keywords

ACTIVATION ENERGY; DEFECTS; HYDROGEN; IRON; PASSIVATION; SILICON; CALCULATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; VACANCIES;

FIRST PRINCIPLES CALCULATIONS; HYDROGEN PASSIVATION; SELF INTERSTITIAL; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES THEORY; INTERSTITIAL IRON; IRON-ACCEPTOR PAIRS; RECOMBINATION CENTERS; SELF-INTERSTITIAL; THEORY;

MOLECULAR INTERACTIONS; IRON;

EID: 38749111873     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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