메뉴 건너뛰기




Volumn 1, Issue , 2006, Pages 1122-1125

Activation energy for the hydrogenation of iron in p-type crystalline silicon wafers

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALLINE MATERIALS; HYDROGENATION; IRON COMPOUNDS; PASSIVATION; THIN FILMS;

EID: 41749116119     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279358     Document Type: Conference Paper
Times cited : (15)

References (10)
  • 1
    • 33746835557 scopus 로고    scopus 로고
    • Hydrogen passivation of iron in crystalline silicon
    • PVSEC, Paris
    • A. Azzizi, L. J. Geerligs and D. Macdonald, "Hydrogen passivation of iron in crystalline silicon", Proc. 19th Europ. PVSEC, Paris, 2004, pp. 1021-1024.
    • (2004) Proc. 19th Europ , pp. 1021-1024
    • Azzizi, A.1    Geerligs, L.J.2    Macdonald, D.3
  • 2
    • 41749094067 scopus 로고    scopus 로고
    • Dependence of phosphorus gettering of multicrystalline silicon on diffusion sheet resistance and ingot position
    • Barcelona, Spain
    • D. L. Bätzner, et al., "Dependence of phosphorus gettering of multicrystalline silicon on diffusion sheet resistance and ingot position", Proc 20th Europ. PVSEC, Barcelona, Spain, 2005, pp. 655-658.
    • (2005) Proc 20th Europ. PVSEC , pp. 655-658
    • Bätzner, D.L.1
  • 8
    • 0742266388 scopus 로고    scopus 로고
    • University of New South Wales, Sydney, Australia
    • P. A. Basore and D. A. Clugston, "PC1D V5.3", University of New South Wales, Sydney, Australia, 1998.
    • (1998) PC1D V5.3
    • Basore, P.A.1    Clugston, D.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.