Experimental and theoretical study of heterogeneous iron precipitation in silicon

Journal of Applied Physics

Volumn 101, Issue 4, 2007, Pages

  Haarahiltunen, A ^a   Vainola H ^a   Anttila, O ^b   Yli Koski, M ^a   Sinkkonen, J ^a  

^a AALTO UNIVERSITY   (Finland)

^b Okmetic Oyj   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

FOKKER PLANCK EQUATION; IRON; ISOTHERMAL ANNEALING; NUCLEATION; PRECIPITATION (CHEMICAL); SUPERSATURATION;

DISSOLUTION RATES; GETTERING EFFICIENCY; IRON PRECIPITATION; THERMAL PROCESSING;

SILICON;

EID: 33847649985     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2472271     Document Type: Article

References (37)

1. H. Hieslmair, A. A. Istratov, S. A. McHugo, C. Flink, T. Heiser, and E. R. Weber, Appl. Phys. Lett. 72, 1460 (1998).
2. H. Hieslmair, S. Balasubramanian, A. A. Istratov, and E. R. Weber, Semicond. Sci. Technol. 16, 567 (2001).
3. A. L. Smith, K. Wada, and L. C. Kimerling, J. Electrochem. Soc. 147, 1154 (2000).
4. T. Y. Tan, R. Gafiteanu, S. M. Joshi, and U. Gösele, in Semiconductor Silicon 1998, edited by, H. Huff, U. Gösele, and, H. Tsuya, (The Electrochemical Society, Pennington, NJ, 1998), p. 1050.
5. H. Hieslmaier, A. A. Istratov, and E. R. Weber, Semicond. Sci. Technol. 13, 1401 (1998).
6. K. Nakamura and J. Tomioka, in Proceedings of The Electrochemical Society Spring 2006 Meeting, Denver, CO, edited by, H. Huff, L. Fabry, D. Gilles, U. Goesele, T. Hattori, W. Huber, S. Ikeda, H. Iwai, P. Packan, H. Richter, M. Rodder, E. Weber, and, R. Wise, (The Electrochemical Society, Pennington, NJ, 2006), pp. 275-286.
7. P. Geranzani, M. Pagani, C. Pello, and G. Borionetti, Solid State Phenom. 82-84, 381 (2002).
8. F. S. Ham, J. Phys. Chem. Solids 6, 335 (1958).
9. D. Gilles, E. R. Weber, and S. Hahn, Phys. Rev. Lett. 64, 196 (1990).
10. A. Haarahiltunen, M. Yli-Koski, H. Väinölä, M. Palokangas, E. Saarnilehto, and J. Sinkkonen, Phys. Scr., T T114, 88 (2004).
11. R. J. Falster, G. R. Fisher, and G. Ferrero, Appl. Phys. Lett. 59, 809 (1991).
12. R. Falster, in Device Manu Proceedings of the Satellite Symposium to ESSDERC 93, Grenoble, France, edited by, B. O. Kolbesen, C. Claeys, P. Stallhofer, and, F. Tardif, (The Electrochemical Society, Pennington, NJ, 1993), pp. 149-169.
13. A. Haarahiltunen, H. Väinölä, O. Anttila, E. Saarnilehto, M. Yli-Koski, J. Storgrds, and J. Sinkkonen, Appl. Phys. Lett. 87, 151908 (2005).
14. A. Borghesi, B. Pivac, A. Sassella, and A. Stella, J. Appl. Phys. 77, 4169 (1995).
15. H. Takeno, T. Otogawa, and Y. Kitaqawara, J. Electrochem. Soc. 144, 4340 (1997).
16. ASTM F121-83.
17. H. Väinölä, A. Haarahiltunen, M. Yli-Koski, E. Saarnilehto, and J. Sinkkonen, in Proceedings of The Electrochemical Society Fall 2004 Meeting, Honolulu, HA, edited by, C. L. Claeys, M. Watanabe, R. Falster, and, P. Stallhofer, (The Electrochemical Society, Pennington, NJ, 2004), pp. 160-164.
18. A. Kempf, P. Blöchl, A. Huber, L. Fabry, and L. Meinecke, in Recombination Lifetime Measurements in Silicon, edited by, D. C. Gupta, F. R. Bacher, and, W. M. Hughes, (ASTM, West Conshohocken, 1998), p. 259.
19. A. Haarahiltunen, H. Väinölä, M. Yli-Koski, E. Saarnilehto, and J. Sinkkonen, in Proceedings of The Electrochemical Society Fall 2004 Meeting, Honolulu, HA, edited by, C. L. Claeys, M. Watanabe, R. Falster, and, P. Stallhofer, (The Electrochemical Society, Pennington, NJ, 2004), pp. 135-145.
20. S. Kobayashi, J. Cryst. Growth 174, 163 (1997).
21. H. Takahashi, H. Yamada-Kaneta, and M. Suezawa, Jpn. J. Appl. Phys., Part 1 37, 1689 (1998).
22. J. Vanhellemont and C. Claeys, Mater. Sci. Forum 38, 171 (1989).
23. S. A. McHugo, E. R. Weber, M. Mizuno, and F. G. Kirscht, Appl. Phys. Lett. 66, 2840 (1995).
24. A. Mesli, T. Heiser, N. Amroun, and P. Siffert, Appl. Phys. Lett. 57, 1898 (1990).
25. J. S. Chang, and G. Cooper, J. Comput. Phys. 6, 1 (1970).
26. M. Aoki, A. Hara, and A. Ohsawa, J. Appl. Phys. 72, 895 (1992).
27. A. A. Istratov, H. Hieslmair, and E. R. Weber, Appl. Phys. A: Mater. Sci. Process. A69, 13 (1999).
28. S. Ogushi, S. Sadamitsu, K. Marsden, Y. Koike, and M. Sano, Jpn. J. Appl. Phys., Part 1 36, 6601 (1997).
29. M. Aoki and A. Hara, J. Appl. Phys. 74, 1440 (1993).
30. P. Zhang, H. Väinölä, A. A. Istratov, and E. R. Weber, Physica B 340-342, 1050 (2003).
31. K. Graff, H. A. Hefner, and W. Hennerici, J. Electrochem. Soc. 135, 952 (1988).
32. B. Shen, T. Sekiguchi, R. Zhang, Y. S. Shi, H. Shi, K. Yang, Y. Zheng, and K. Sumino, Jpn. J. Appl. Phys., Part 1 35, 3301 (1996).
33. B. Shen, Appl. Phys. Lett. 70, 1876 (1997).
34. A. A. Istratov, W. Huber, and E. R. Weber, J. Electrochem. Soc. 150, G244 (2003).
35. K. Sueoka, M. Akatsuka, M. Yonemura, S. Sadamitsu, E. Asayama, T. Ono, Y. Koike, and H. Katahama, Solid State Phenom. 69-70, 63 (1999).
36. R. Hoelzl, M. Blietz, L. Fabry, and R. Schmolke, in Semiconductor Silicon/2002, edited by, H. R. Huff, L. Fabry, and, S. Kishino, (The Electrochemical Society, Pennington, NJ, 2002), pp. 608.
37. S. Isomae, H. Ishida, Toshihiko, and K. Hozawa, J. Electrochem. Soc. 149, G343 (2002).