Hydrogenation in crystalline silicon materials for photovoltaic application

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 343-349

  Hahn, Giso ^a   Käs, Martin ^a   Herzog, Bernhard ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

Bulk passivation; Defects; Gettering; Hydrogenation; Multicrystalline silicon; Ribbon silicon

Indexed keywords

ANNEALING; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; HYDROGEN; HYDROGENATION; INDUSTRIAL APPLICATIONS; PASSIVATION; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; SURFACE DEFECTS; COST REDUCTION; DEFECTS; PLASMA CVD; SEMICONDUCTOR DEVICES;

ATOMIC HYDROGEN; BELT-FURNACES; BULK DEFECTS; BULK LIFETIME; BULK PASSIVATION; CRYSTALLINE SILICON MATERIALS; DIELECTRIC LAYER; GETTERING; HIGHER EFFICIENCY; IN-DIFFUSION; MULTI-CRYSTALLINE SILICON; PHOTOVOLTAIC APPLICATIONS; SEMICONDUCTOR DEVICE FABRICATION; STACK SYSTEMS; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; RIBBON SILICONS;

SURFACES; PASSIVATION;

EID: 75849159892     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.343     Document Type: Conference Paper

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