Hydrogen passivation of iron-related hole traps in silicon

Journal of Applied Physics

Volumn 80, Issue 3, 1996, Pages 1485-1487

  Kouketsu, Masami ^a   Isomae, Seiichi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000280527     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363018     Document Type: Article

References (14)

1. K. Ikuta and T. Ohara, Jpn. J. Appl. Phys. 23, 984 (1984).
2. S. J. Pearton, J. W. Corbett, and T. S. Shi, Appl. Phys. A 43, 153 (1987).
3. E. R. Weber, Appl. Phys. A 30, 1 (1983).
4. R. Singh and S. J. Fonash, Appl. Phys. Lett. 49, 800 (1986).
5. K. Wünstel and P. Wagner, Solid State Commun. 40, 797 (1981).
6. K. Graff and H. Pieper, J. Electrochem. Soc. 128, 669 (1981).
7. S. J. Pearton and A. J. Tavendale, J. Phys. C 17, 9701 (1984).
8. C. Munakata, N. Honma, and H. Itho, Jpn. J. Appl. Phys. 22, L103 (1983).
9. K. Graff and H. Piper, J. Electrochem. Soc. 128, 669 (1981).
10. H. Okushi and Y. Tokumaru, Jpn. J. Appl. Phys. 19, L335 (1980).
11. K. Irmscher, H. Klose, and K. Maass, J. Phys. 17, 6317 (1984).
12. J. R. Troxell, Solid State Electron. 26, 539 (1983).
13. J. J. von Kooten, G. A. Weller, and C. A. J. Ammerlaan, Phys. Rev. B 30, 4564 (1984).
14. A. Zünger, Solid State Phys. 39, 275 (1986).