Morphology and growth of capped Ge/Si quantum dots

Journal of Nanoparticle Research

Volumn 15, Issue 5, 2013, Pages

  Yacoby, Yizhak ^a   Elfassy, Naomi ^a   Ray, Samit K ^b   Singha, Raj K ^b   Das, Samaresh ^b   Cohen, Eyal ^a   Yochelis, Shira ^a   Clarke, Roy ^c   Paltiel, Yossi ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

MBE; Nano crystals; Quantum dots; Self assembly; X ray crystallography

Indexed keywords

CONTACT ANGLE; CRYSTAL ATOMIC STRUCTURE; GRAPHENE QUANTUM DOTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOCRYSTALS; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; WETTING; X RAYS;

AVERAGE DIAMETER; AVERAGE HEIGHT; CHEMICAL COMPOSITIONS; GE/SI QUANTUM DOTS; GROWTH MECHANISMS; PARTIAL WETTING; PHASING METHODS; QUANTUM DOT SYSTEMS;

X RAY CRYSTALLOGRAPHY;

GERMANIUM; QUANTUM DOT; SILICON;

ARTICLE; CHEMICAL COMPOSITION; CHEMICAL STRUCTURE; CONTACT ANGLE; PARTICLE SIZE; PRIORITY JOURNAL; X RAY CRYSTALLOGRAPHY;

EID: 84875553490     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-013-1608-3     Document Type: Article

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