Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs

Applied Physics Letters

Volumn 98, Issue 2, 2011, Pages

  Kumah, D P ^a,c   Wu, J H ^a   Husseini, N S ^a   Dasika, V D ^a,d   Goldman, R S ^a   Yacoby, Y ^b   Clarke, R ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^c YALE UNIVERSITY   (United States)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; ATOMIC SPACING; COHERENT BRAGG ROD ANALYSIS; DIRECT X-RAY; ELECTRON DENSITY MAPS; GAAS; GAAS SUBSTRATES; INAS QUANTUM DOTS; LAYER STACKING; SELF-ASSEMBLED; SUBSTRATE INTERFACE; WETTING LAYER;

GALLIUM ARSENIDE; INDIUM ARSENIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 78751558945     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3535984     Document Type: Article

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