Atomic-scale mapping of quantum dots formed by droplet epitaxy

Nature Nanotechnology

Volumn 4, Issue 12, 2009, Pages 835-838

  Kumah, Divine P ^a   Shusterman, Sergey ^b   Paltiel, Yossi ^c   Yacoby, Yizhak ^c   Clarke, Roy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b SOREQ NUCLEAR RESEARCH CENTER   (Israel)

^c HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DROPS; ENERGY HARVESTING; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MAPPING; NANOCRYSTALS; OPTOELECTRONIC DEVICES; QUANTUM OPTICS; X RAYS;

CORE SHELL STRUCTURE; DROPLET EPITAXY; FABRICATION METHOD; GROWTH MECHANISMS; MATERIAL COMBINATION; QUANTUM-INFORMATION PROCESSING; RESOLUTION MAPS; SUBSTRATE SURFACE;

SEMICONDUCTOR QUANTUM DOTS;

ANTIMONY; QUANTUM DOT;

ARTICLE; ATOM; CRYSTALLIZATION; DEVICE; ELECTRONICS; ENERGY; INFORMATION PROCESSING; PRIORITY JOURNAL; STRUCTURE ANALYSIS; TECHNIQUE; X RAY ANALYSIS;

EID: 72549110483     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2009.271     Document Type: Article

References (29)

1. Yoffe, A. D. Semiconductor quantum dots and related systems: electronic, optical, luminescence and related properties of low dimensional systems. Adv. Phys. 50, 1-208 (2001).
2. Borovitskaya, E. & Shur, M. S. Quantum dots. Sel. Top. Electr. Syst. 25 (2002).
3. Biolatti, E., Iotti, R. C., Zanardi, P. & Rossi, F. Quantum information processing with semiconductor macroatoms. Phys. Rev. Lett. 85, 5647-5650 (2000).
4. Geller, M. et al. 106 years extrapolated hole storage time in GaSb/AlAs quantum dots, Appl. Phys. Lett. 91, 242109 (2007).
5. Grätzel, M. Photoelectrochemical cells. Nature 414, 338-344 (2001).
6. Robel, I., Subramanian, V. Kuno, M. & Kamat, P. V. Quantum dot solar cells. Harvesting light energy with CdSe nanocrystals molecularly linked to mesoscopic TiO2 films. J. Am. Chem. Soc. 128, 2385-2393 (2006).
7. Koguchi, N., Ishige, K. & Takahashi, S. New selective molecular-beam-epitaxial growth method for direct formation of GaAs quantum dots. J. Vac. Sci. Technol. B 11, 787-790 (1993).
8. Shusterman, S., Paltiel, Y., Sher A., Ezersky & Rosenwaks, Y. High-density nanometer-scale InSb dots formation using droplet heteroepitaxial growth by MOVPE, J. Cryst. Growth 291, 363-369 (2006).
9. Sablon, K. A., Lee, J. H., Wang, Z., Shultz, J. H. & Salamo, G. J. Configuration control of quantum dot molecules by droplet epitaxy. Appl. Phys. Lett. 92, 203106 (2008).
10. Shusterman, S. et al. Nanoscale mapping of strain and composition in quantum dots using Kelvin probe force microscopy. Nano Lett. 7, 2089-2093 (2007).
11. Wang, Y. et al. Real-time X-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy. J. Appl. Phys. 102, 073522 (2007).
12. Yacoby, Y. et al. Direct determination of epitaxial interface structure in Gd2O3 passivation of GaAs. Nature Mater. 1, 99-101 (2002).
13. Kumah, D. P. et al. Resonant coherent Bragg rod analysis of strained epitaxial heterostructures. Appl. Phys. Lett. 93, 081910 (2008).
14. Cionca, C. N. et al. Interfacial structure, bonding and composition of InAs and GaSb thin films determined using coherent Bragg rod analysis. Phys. Rev. B 75, 115306 (2007).
15. Eaglesham, D. J. & Cerullo, M. Dislocation-free Stranski-Krastanow growth of Ge on Si (100). Phys. Rev. Lett. 64, 1943-1946 (1990).
16. He, L. X., Bester G. & Zunger, A. Strain-induced interfacial hole localization in self-assembled quantum dots: Compressive InAs/GaAs versus tensile InAs/InSb. Phys. Rev. B 70, 235316 (2004).
17. Pryor, C. J. & Pistol, M. J. Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots. Phys. Rev. B 72, 205311 (2005).
18. Joe, Y. S., Ikeler, D. S., Cosby, R. M., Satanin, A. M. & Kim, C. S. Characteristics of transmission resonance in a quantum-dot superlattice. J. Appl. Phys. 88, 2704-2708 (2000).
19. Johansson, J. et al. Structural properties of (111)B-oriented III-V nanowires. Nature Mater. 5, 574-580 (2006).
20. Wang, Zh. M., Liang, B. L., Sablon, K. A. & Salamo, G. J. Nanoholes fabricated by self-assembled gallium nanodrill on GaAs (100). Appl. Phys. Lett. 90, 113120 (2007).
21. Koguchi, N. & Ishige, K. Growth of GaAs epitaxial microcrystals on an S-terminated GaAs substrate by successive irradiation of Ga and As molecular beams. Jpn. J. Appl. Phys. 32, 2052-2058 (1993).
22. Timm, R. et al. Structure of InAs/GaAs quantum dots grown with Sb surfactant. Physica E 32, 25-28 (2006).
23. Shusterman, S., Raizman A. & Paltiel Y. Narrow gap nano-dots grown in the heteroepitaxial droplets mode. Infrared Phys. Technol. (in the press).
24. Yacoby, Y. et al. Structural changes induced by metal electrode layers on ultrathin BaTiO3 films. Phys. Rev. B 77, 195426 (2008).
25. Molina, S. I. et al. High resolution electron microscopy of GaAs capped GaSb nanostructures. Appl. Phys. Lett. 94, 043114 (2009).
26. Fry, P. W. et al. Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots. Phys. Rev. Lett. 84, 734-736 (2000).
27. Yacoby Y. et al. Direct structure determination of systems with two-dimensional periodicity. J. Phys. Condens. Mat. 12, 3929-3938 (2000).
28. Elser, V. Solution of the crystallographic phase problem by iterated projection. Acta Cryst. A 59, 201-209 (2003).
29. Stahn, J., Möhle, M. & Pietsch, U. Comparison of experimental and theoretical structure amplitudes and valence charge densities of GaAs. Acta Crystallographica B 54, 231-239 (1998).