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Physical Review B - Condensed Matter and Materials Physics
Volumn 65, Issue 15, 2002, Pages 1533061-1533064
Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
(7)
Liao, X Z
a,b
Zou, J
a
Cockayne, D J
c
Wan, J
d
Jiang, Z M
d,e
Jin, G
d
Wang, Kang L
d
a
UNIVERSITY OF SYDNEY
(
Australia
)
b
LOS ALAMOS NATIONAL LABORATORY
(
United States
)
c
UNIVERSITY OF OXFORD
(
United Kingdom
)
d
UNIVERSITY OF CALIFORNIA
(
United States
)
e
FUDAN UNIVERSITY
(
China
)
Author keywords
[No Author keywords available]
Indexed keywords
ARTICLE; ELECTRON BEAM; IMAGE ANALYSIS; QUANTUM MECHANICS; SCANNING ELECTRON MICROSCOPY; STRUCTURE ACTIVITY RELATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROMETRY;
EID
:
0037089359
PISSN
:
01631829
EISSN
:
None
Source Type
:
Journal
DOI
:
None
Document Type
:
Article
Times cited : (
67
)
References (
23
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