Stochastic modeling hysteresis and resistive switching in bipolar oxide-based memory

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2010, Pages 237-240

  Makarov, Alexander ^a   Sverdlov, Viktor ^a   Selberherr, Siegfried ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Monte Carlo method; Resistive switching mechanism; RRAM; Stochastic model

Indexed keywords

BIPOLAR OXIDE; ELECTRON HOPPING; ELECTRON OCCUPATION; HYSTERESIS CYCLES; OXIDE IONS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; RRAM; STOCHASTIC MODELING; SWITCHING BEHAVIORS; SWITCHING TIME; UNIPOLAR SWITCHING;

BEHAVIORAL RESEARCH; COMPUTER SIMULATION; EMPLOYMENT; HYSTERESIS; MONTE CARLO METHODS; PROBABILITY DISTRIBUTIONS; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICES; STOCHASTIC SYSTEMS; SWITCHING; SWITCHING SYSTEMS;

STOCHASTIC MODELS;

EID: 78649597163     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2010.5604517     Document Type: Conference Paper

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