메뉴 건너뛰기




Volumn , Issue , 2012, Pages

Retention model for high-density ReRAM

Author keywords

Filament; ReRAM; Retention

Indexed keywords

HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; OXYGEN DIFFUSION; RERAM; RETENTION; RETENTION MODELS;

EID: 84864140747     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2012.6213638     Document Type: Conference Paper
Times cited : (31)

References (6)
  • 1
    • 67650102619 scopus 로고    scopus 로고
    • Redox-Based Resistive Switching Memories -Nanoionic Mechanisms, Prospects, and Challenges
    • R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-Based Resistive Switching Memories -Nanoionic Mechanisms, Prospects, and Challenges," Adv. Mater., 21, 2632-2663 (2009)
    • (2009) Adv. Mater. , vol.21 , pp. 2632-2663
    • Waser, R.1    Dittmann, R.2    Staikov, G.3    Szot, K.4
  • 2
    • 78649340782 scopus 로고    scopus 로고
    • Resistive Random Access Memory (ReRAM) Based on Metal Oxides
    • H. Akinaga and H. Shima, "Resistive Random Access Memory (ReRAM) Based on Metal Oxides," Proceedings of the IEEE, 98, 2237-2251, (2010)
    • (2010) Proceedings of the IEEE , vol.98 , pp. 2237-2251
    • Akinaga, H.1    Shima, H.2
  • 3
    • 77950073765 scopus 로고    scopus 로고
    • Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories
    • D. Ielmini, F. Nardi, C. Cagli, and A. L. Lacaita, "Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories, " IEEE Electron Dev. Lett., 31, 353-355 (2010)
    • (2010) IEEE Electron Dev. Lett. , vol.31 , pp. 353-355
    • Ielmini, D.1    Nardi, F.2    Cagli, C.3    Lacaita, A.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.