Effects of ionic doping on the behaviors of oxygen vacancies in HfO 2 and ZrO2: A first principles study

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2009, Pages

  Zhang, Haowei ^a   Gao, Bin ^a   Yu, Shimeng ^a   Lai, Lin ^a   Zeng, Lang ^a   Sun, Bing ^a   Liu, Lifeng ^a   Liu, Xiaoyan ^a   Lu, Jing ^a   Han, Ruqi ^a   Kang, Jinfeng ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

First principles calculation; Hafnium oxide; Ionic doping effect; Oxygen vacancy; Zirconium oxide

Indexed keywords

DENSITY OF STATE; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; FORMATION ENERGIES; IONIC DOPING; IONIC DOPING EFFECT; LA DOPING; MIGRATION BARRIERS; MIGRATION ENERGY; SIGNIFICANT IMPACTS; TRIVALENT ION; ZIRCONIUM OXIDE;

ALUMINUM; DOPING (ADDITIVES); HAFNIUM; HAFNIUM OXIDES; IONS; OXYGEN; SEMICONDUCTOR DEVICES; VACANCIES; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

OXYGEN VACANCIES;

EID: 74349097842     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2009.5290225     Document Type: Conference Paper

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