Physical mechanisms of endurance degradation in TMO-RRAM

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Chen, B ^a   Lu, Y ^a   Gao, B ^a   Fu, Y H ^a   Zhang, F F ^a   Huang, P ^a   Chen, Y S ^a   Liu, L F ^a   Liu, X Y ^a   Kang, J F ^a   Wang, Y Y ^a   Fang, Z ^b,c   Yu, H Y ^b   Li, X ^c   Wang, X P ^c   Singh, N ^c   Lo, G Q ^c   Kwong, D L ^c  

^a PEKING UNIVERSITY   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE BEHAVIORS; PHYSICAL MECHANISM; SWITCHING CYCLES; SWITCHING MODES;

ELECTRON DEVICES;

DURABILITY;

EID: 84863073355     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131539     Document Type: Conference Paper

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