Highly reliable and fast nonvolatile hybrid switching ReRAM memory using thin Al2O3 demonstrated at 54nm memory array

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 48-49

  Yi, Jaeyun ^a   Choi, Hyejung ^a   Lee, Seunghwan ^a   Lee, Jaeyeon ^a   Son, Donghee ^a   Lee, Sangkeum ^a   Hwang, Sangmin ^a   Song, Seokpyo ^a   Park, Jinwon ^a   Kim, Sookjoo ^a   Kim, Wangee ^a   Kim, Ja Yong ^a   Lee, Sunghoon ^a   Moon, Jiwon ^a   You, Jinju ^a   Joo, Moonsig ^a   Roh, JaeSung ^a   Park, Sungki ^a   Chung, Sung Woong ^a   Lee, Junghoon ^a   Hong, Sung Joo ^a   more..

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

1T1R; bipolar; Resistive switching

Indexed keywords

1T1R; ARRAY SIZES; BIPOLAR; HIGH RELIABLE; HYBRID-SWITCHING; KEY FACTORS; MEMORY ARRAY; NON-VOLATILE; RESET CURRENTS; RESISTANCE DISTRIBUTION; RESISTIVE SWITCHING; TIO; TUNNEL BARRIER;

TITANIUM DIOXIDE;

ALUMINUM;

EID: 80052675608     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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2. C. J. Chevallier, et al., ISSCC Tech. Dig., 2010, pp.260
3. S. Sheu, et al., VLSI Tech. Dig., 2004, pp. 83
4. S. Kawabata, et al., IMW. Tech. Dig., 2010, pp. 60