Thin film deposition of metal oxides in resistance switching devices: Electrode material dependence of resistance switching in manganite films

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-7

  Nakamura, Toshihiro ^a   Homma, Kohei ^a   Tachibana, Kunihide ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Impedance spectroscopy; Manganite; PCMO; ReRAM; Resistance switching

Indexed keywords

ALUMINUM OXIDE; DEPOSITION; ELECTRIC RESISTANCE; ELECTRODES; ELECTRONIC PROPERTIES; FREE ENERGY; GIBBS FREE ENERGY; HYSTERESIS; INTERFACE STATES; MANGANITES; METALS; OXIDATION; PLATINUM COMPOUNDS; RRAM; SPECTROSCOPY; THIN FILMS;

ALTERNATING CURRENT IMPEDANCE SPECTROSCOPY; BIPOLAR RESISTANCE SWITCHING; DIRECT-CURRENT CURRENT-VOLTAGE; ELECTRIC-PULSE-INDUCED RESISTANCE SWITCHING; IMPEDANCE SPECTROSCOPY; INTERFACIAL OXIDE LAYERS; PCMO; RESISTANCE SWITCHING;

SWITCHING;

EID: 84875155497     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-76     Document Type: Article

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