Impedance spectroscopy of manganite films prepared by metalorganic chemical vapor deposition

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 9, 2011, Pages 8408-8411

  Nakamura, Toshihiro ^a   Homma, Kohei ^a   Tachibana, Kunihide ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Impedance spectroscopy; Manganite; Metal electrode; MOCVD; ReRAM; Resistance switching

Indexed keywords

AC IMPEDANCE SPECTROSCOPY; AL ELECTRODE; APPLIED VOLTAGES; BIAS DEPENDENCE; BULK IMPEDANCE; COLE-COLE PLOTS; CURRENT-VOLTAGE MEASUREMENTS; I - V CURVE; IMPEDANCE SPECTROSCOPY; IMPEDANCE SPECTRUM; IN-SITU; INFRARED SPECTROSCOPIC; LIQUID SOURCES; MANGANITE FILMS; METAL ELECTRODE; METAL ELECTRODES; NONLINEAR BEHAVIOR; POLYCRYSTALLINE; RERAM; RESISTANCE CHANGE; RESISTANCE SWITCHING;

ELECTRIC PROPERTIES; EQUIPMENT; FILM PREPARATION; INTERFACES (MATERIALS); MANGANESE OXIDE; MANGANITES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SOLID SOLUTIONS;

ALUMINUM;

EID: 84863053820     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.5092     Document Type: Conference Paper

References (26)

1. Y. Tomioka, A. Asamitsu, H. Kuwahara, Y. Moritomo, and Y. Tokura, Phys. Rev. B 53, R1689 (1996).
2. S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. 76, 2749 (2000).
3. W. W. Zhuang, W. Pan, B. D. Ulrich, J. J. Lee, L. Stecker, A. Burnaster, D. R. Evans, S. T. Hsu, M. Tajiri, A. Shimaoka, K. Inoue, T. Naka, N. Awaya, K. Sakiyama, Y. Wang, S. Liu, N. J. Wu, and A. Ignatiev, Tech. Dig. Int. Electron Devices Meet. 193 (2002).
4. A. Baikalov, Y. Q. Wang, B. Shen, B. Lorenz, S. Tsui, Y. Y. Sun, Y. Y. Xue, and C. W. Chu, Appl. Phys. Lett. 83, 957 (2003).
5. S. Tsui, A. Baikalov, J. Cmaidalka, Y. Y. Sun, Y. Q. Wang, Y. Y. Xue, C. W. Chu, L. Chen, and A. J. Jacobson, Appl. Phys. Lett. 85, 317 (2004).
6. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 85, 4073 (2004).
7. A. Odagawa, H. Sato, I. H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, T. Kanno, and H. Adachi, Phys. Rev. B 70, 224403 (2004).
8. C. J. Kim, B. I. Kim, and I.-W. Chen, Jpn. J. Appl. Phys. 44, 1260 (2005).
9. W. C. Peng, J. G. Lin, and J. H. Wu, J. Appl. Phys. 100, 093704 (2006).
10. D. S. Kim, C. E. Lee, Y. H. Kim, and Y. T. Kim, J. Appl. Phys. 100, 093901 (2006).
11. M. Fujimoto, H. Koyama, S. Kobayashi, Y. Tamai, N. Awaya, Y. Nishi, and T. Suzuki, Appl. Phys. Lett. 89, 243504 (2006).
12. S. T. Hsu, T. Li, and N. Awaya, J. Appl. Phys. 101, 024517 (2007).
13. T. Nakamura, K. Homma, R. Tai, A. Nishio, and K. Tachibana, IEEE Trans. Magn. 43, 3070 (2007).
14. Y. B. Nian, J. Strozier, N. J. Wu, X. Chen, and A. Ignatiev, Phys. Rev. Lett. 98, 146403 (2007).
15. T. Nakamura, K. Homma, T. Yakushiji, R. Tai, A. Nishio, and K. Tachibana, Surf. Coat. Technol. 201, 9275 (2007).
16. N. Das, S. Tsui, Y. Y. Xue, Y. Q. Wang, and C. W. Chu, Phys. Rev. B 78, 235418 (2008).
17. T. Harada, I. Ohkubo, K. Tsubouchi, H. Kumigashira, T. Ohnishi, M. Lippmaa, Y. Matsumoto, H. Koinuma, and M. Oshima, Appl. Phys. Lett. 92, 222113 (2008).
18. T. Nakamura, K. Onogi, K. Homma, and K. Tachibana, ECS Trans. 25, 865 (2009).
19. W.-Y. Chang, J.-H. Liao, Y.-S. Lo, and T.-B. Wu, Appl. Phys. Lett. 94, 172107 (2009).
20. S.-L. Li, D. S. Shang, J. Li, J. L. Gang, and D. N. Zheng, J. Appl. Phys. 105, 033710 (2009).
21. Z. L. Liao, Z. Z. Wang, Y. Meng, Z. Y. Liu, P. Gao, J. L. Gang, H. W. Zhao, X. J. Liang, X. D. Bai, and D. M. Chen, Appl. Phys. Lett. 94, 253503 (2009).
22. R. Yasuhara, T. Yamamoto, I. Ohkubo, H. Kumigashira, and M. Oshima, Appl. Phys. Lett. 97, 132111 (2010).
23. X. Liu, K. P. Biju, E. M. Bourim, S. Park, W. Lee, D. Lee, K. Seo, and H. Hwang, Electrochem. Solid-State Lett. 14, H9 (2011).
24. T. Nakamura, T. Nishimura, R. Tai, and K. Tachibana, J. Appl. Phys. 97, 10H712 (2005).
25. T. Nakamura, R. Tai, T. Nishimura, and K. Tachibana, J. Electrochem. Soc. 152, C584 (2005).
26. T. Nakamura, R. Tai, and K. Tachibana, J. Appl. Phys. 99, 08Q302 (2006).