Electric-pulse-induced resistance switching in magnetoresistive manganite films grown by metalorganic chemical vapor deposition

IEEE Transactions on Magnetics

Volumn 43, Issue 6, 2007, Pages 3070-3072

  Nakamura, Toshihiro ^a   Homma, Kohei ^a   Tai, Ryusuke ^a   Nishio, Akira ^a   Tachibana, Kunihide ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Colossal magnetoresistance; Manganite perovskite; Resistance random access memory (ReRAM); Resistance switching

Indexed keywords

COLOSSAL MAGNETORESISTANCE; DATA STORAGE EQUIPMENT; ELECTRODES; INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PEROVSKITE; RANDOM ACCESS STORAGE;

COMPOSITION RATIO; METAL ELECTRODES; RESISTANCE CHANGE; RESISTANCE SWITCHING;

MAGNETIC FILMS;

EID: 34249004723     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2007.893115     Document Type: Article

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