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Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9275-9278

Metalorganic chemical vapor deposition of metal oxide films exhibiting electric-pulse-induced resistance switching

Author keywords

Manganite; MOCVD; Resistance random access memory; Resistance switching

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; MANGANITES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SUBSTRATES;

EID: 34547663752     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.090     Document Type: Article
Times cited : (11)

References (22)
  • 19
    • 85130088803 scopus 로고    scopus 로고
    • T. Nakamura, K. Homma, R. Tai, A. Nishio, K. Tachibana, IEEE Trans. Magn. 43 (2007) 3070.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.