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Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9275-9278
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Metalorganic chemical vapor deposition of metal oxide films exhibiting electric-pulse-induced resistance switching
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Author keywords
Manganite; MOCVD; Resistance random access memory; Resistance switching
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Indexed keywords
CRYSTAL ATOMIC STRUCTURE;
CURRENT VOLTAGE CHARACTERISTICS;
MANGANITES;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SUBSTRATES;
ATOMIC COMPOSITION;
RESISTANCE SWITCHING;
MOS DEVICES;
CRYSTAL ATOMIC STRUCTURE;
CURRENT VOLTAGE CHARACTERISTICS;
MANGANITES;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MOS DEVICES;
SUBSTRATES;
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EID: 34547663752
PISSN: 02578972
EISSN: None
Source Type: Journal
DOI: 10.1016/j.surfcoat.2007.04.090 Document Type: Article |
Times cited : (11)
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References (22)
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