Silicon nanowires: Electron holography studies of doped p-n junctions and biased Schottky barriers

Nanotechnology

Volumn 24, Issue 11, 2013, Pages

  He, Kai ^a   Cho, Jeong Hyun ^b   Jung, Yeonwoong ^c   Tom Picraux, S ^b   Cumings, John ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUILT-IN VOLTAGE; IV CHARACTERISTICS; OFF-AXIS ELECTRON HOLOGRAPHY; POTENTIAL SHIFT; SCHOTTKY BARRIERS; SI P-N JUNCTIONS; SILICON NANOWIRES; TRANSMISSION ELECTRON MICROSCOPE;

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRON HOLOGRAPHY; NANOWIRES; PLATINUM; SCHOTTKY BARRIER DIODES; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR JUNCTIONS;

EID: 84874835577     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/11/115703     Document Type: Article

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