Highly efficient charge separation and collection across in situ doped axial VLS-grown Si nanowire p-n junctions

Nano Letters

Volumn 12, Issue 4, 2012, Pages 1965-1971

  Mohite, A D ^a   Perea, D E ^a,b   Singh, S ^a,c   Dayeh, S A ^a   Campbell, I H ^a   Picraux, S T ^a   Htoon, H ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Minority carrier diffusion length; nanowire; p n junction; photocurrent; scanning photocurrent microscopy

Indexed keywords

AS-GROWN; CHARGE SEPARATIONS; COLD WALL; CVD REACTORS; DIFFUSION LENGTH; ENERGY APPLICATIONS; HOT-WALL REACTORS; IN-SITU; INTERNAL QUANTUM EFFICIENCY; MINORITY CARRIER DIFFUSION LENGTH; ORDERS OF MAGNITUDE; P-N JUNCTION; SEMICONDUCTOR NANOWIRE; SI NANOWIRE; SI P-N JUNCTIONS; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS;

CHEMICAL VAPOR DEPOSITION; PHOTOCURRENTS; PHOTOEXCITATION; SEMICONDUCTOR JUNCTIONS; SEPARATION; SILICON; SOLAR ENERGY;

NANOWIRES;

EID: 84859725302     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl204505p     Document Type: Article

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