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Volumn 107, Issue 21, 2011, Pages

Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors

(7) Martin, Dominik a Heinzig, Andre a Grube, Matthias a Geelhaar, Lutz b Mikolajick, Thomas a,c Riechert, Henning b Weber, Walter M a

a NAMLAB GGMBH (Germany)

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

c DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; ELECTRICAL SCANNING; ELECTRONIC TRANSPORT; NANO-METER-SCALE; NONVOLATILE MEMORY DEVICES; PROOF OF CONCEPT; REPROGRAMMABLE; SCHOTTKY BARRIERS; SCHOTTKY JUNCTIONS; SI NANOWIRE; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; TOP GATE;

ELECTRIC FIELD EFFECTS; NANOWIRES; NONVOLATILE STORAGE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 81555196386 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.107.216807 Document Type: Article

Times cited : (47)

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