Axial p-n nanowire gated diodes as a direct probe of surface-dominated charge dynamics in semiconductor nanomaterials

Journal of Physical Chemistry C

Volumn 115, Issue 47, 2011, Pages 23552-23557

  Koo, Tae Woong ^a,b   Kim, Duk Soo ^b   Lee, Jae Hyun ^a,b   Jung, Young Chai ^b   Lee, Ji Woong ^a,b   Yu, Yun Seop ^c   Hwang, Sung Woo ^b   Whang, Dongmok ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Korea University   (South Korea)

^c Hankyong National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

3D DEVICE SIMULATION; CHARGE DYNAMICS; DIRECT PROBE; ENHANCED SURFACE; FORWARD CURRENTS; GATE BIAS; GATED DIODES; IDEALITY FACTORS; IN-DEPTH UNDERSTANDING; KEY FACTORS; NANO SCALE; NANOSCALE DEVICE; RECTIFYING CHARACTERISTICS; SEMICONDUCTOR NANOMATERIALS; SILICON NANOWIRES; SURFACE STATE; SURFACE TRAP-STATES; SWITCHING BEHAVIORS;

DIODES; ELECTRIC PROPERTIES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; NANOWIRES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SURFACE PROPERTIES; THREE DIMENSIONAL COMPUTER GRAPHICS;

SEMICONDUCTOR DIODES;

EID: 82155179311     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp206639b     Document Type: Article

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