Charge transport characteristics in boron-doped silicon nanowires

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 2931-2938

  Ingole, Sarang ^a,b   Manandhar, Pradeep ^c   Chikkannanavar, Satishkumar B ^c   Akhadov, Elshan A ^c,d   Picraux, S Tom ^a,c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b PURDUE UNIVERSITY   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Depletion layer; Nanoelectronics; Nanowires (NWs); Silicon

Indexed keywords

BORON; CHARGE DENSITY; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC WIRE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; SEMICONDUCTOR DOPING;

CHARGE TRANSPORTS; DEPLETION LAYER; DOPANT CONCENTRATIONS; DOPED SI; DOPED SILICONS; DOPING TECHNIQUES; ELECTRICAL TRANSPORTS; EX-SITU; IN-SITU; INTERFACE CHARGES; PROBE CURRENTS; SILICON NANOWIRES; SIMPLE METHODS; SPECIFIC CONTACT RESISTIVITIES; SURFACE CHARGE DENSITIES; SURFACE DEPLETIONS; SURFACE OXIDES;

SILICON;

EID: 56549093447     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005175     Document Type: Article

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