Direct measurement of nanowire Schottky junction depletion region

Applied Physics Letters

Volumn 99, Issue 22, 2011, Pages

  Koren, E ^a   Berkovitch, N ^a   Azriel, O ^a   Boag, A ^a   Rosenwaks, Y ^a   Hemesath, E R ^b   Lauhon, L J ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP TRAPS; DEPLETION REGION; DIRECT MEASUREMENT; KELVIN PROBE FORCE MICROSCOPY; POTENTIAL PROFILES; POTENTIAL SIMULATION; SCHOTTKY JUNCTIONS; SI NANOWIRE;

SEMICONDUCTING SILICON COMPOUNDS; SURFACE POTENTIAL; THREE DIMENSIONAL; THREE DIMENSIONAL COMPUTER GRAPHICS;

NANOWIRES;

EID: 82955240978     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3665182     Document Type: Article

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