Examination of electrostatic potential distribution across an implanted p-n junction by electron holography

Journal of Electron Microscopy

Volumn 50, Issue 6, 2001, Pages 479-484

  Wang, Z ^a   Sasaki, K ^b   Kato, N ^c   Urata, K ^d   Hirayama, T ^a   Saka, H ^b  

^a JAPAN FINE CERAMICS CENTER   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c Structural Analysis   (Japan)

^d Image Sense Ltd   (Japan)

Author keywords

Mean inner potential; Off axis electron holography; p n junction; Silicon

Indexed keywords

CONFERENCE PAPER;

DROPS; ELECTRON HOLOGRAPHY; MICROELECTRONICS; SEMICONDUCTOR JUNCTIONS; SILICON;

ELECTROSTATIC POTENTIAL DISTRIBUTION; HEAT ANNEALING; HEAVILY DOPED; MEAN INNER POTENTIAL; MICRO-ELECTRONIC DEVICES; OFF-AXIS ELECTRON HOLOGRAPHY; P-N JUNCTION; POTENTIAL DROP; SEMICONDUCTOR MICROELECTRONICS; SI P-N JUNCTIONS;

ELECTRONS;

EID: 0035725598     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/50.6.479     Document Type: Conference Paper

References (7)

1. Electron holographic observations of the electrostatic field associated with thin reverse-biased p-n junction
2. Direct observation of potential distribution across Si / Si p-n junctions using off-axis electron holography
3. Two-dimensional mapping of the electrostatic potential in transistors by electron holography
4. On the mean inner potential in high- and low-energy electron dtffractbn
5. Accurate measurements of mean inner potential of crystal wedges using digital electron holograms
6. Transmission electron holography of silicon nanospheres with surface oxide layers