GaN-based planar p-i-n photodetectors with the be-implanted isolation ring

IEEE Transactions on Electron Devices

Volumn 60, Issue 3, 2013, Pages 1178-1182

  Hou, Jei Li ^a   Chang, Shoou Jinn ^a   Chen, Meng Chu ^b   Liu, C H ^c   Hsueh, Ting Jen ^d   Sheu, Jinn Kong ^a   Li, Shuguang ^e  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAITUNG UNIVERSITY   (Taiwan)

^c NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^d NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^e CHINA UNIVERSITY OF PETROLEUM   (China)

Author keywords

Be implantation; GaN based photodetector (PD); planar

Indexed keywords

BE IMPLANTATION; DETECTIVITY; P-I-N PHOTODETECTORS; PLANAR; REJECTION RATIOS; RESPONSIVITY; REVERSE BIAS; THREE ORDERS OF MAGNITUDE;

GALLIUM ALLOYS; GALLIUM NITRIDE; PHOTODETECTORS;

PHOTONS;

EID: 84874652860     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2239298     Document Type: Article

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